90N15 Datasheet | Specifications & PDF Download

FDD390N15A — N-Channel PowerTrench® MOSFET FDD390N15A N-Channel PowerTrench® MOSFET 150 V, 26 A, 40 m April 2015 Features • RDS(on) = 33.5 m ( T

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Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T V

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Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T V

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FDD390N15ALZ — N-Channel PowerTrench® MOSFET FDD390N15ALZ N-Channel PowerTrench® MOSFET 150 V, 26 A, 42 m January 2014 Features • RDS(on) = 33.4

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isc N-Channel MOSFET Transistor FDPF390N15A ·FEATURES ·With TO-220F packaging ·Drain Source Voltage- : VDSS ≥ 150V ·Static drain-source on-resistanc

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Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 90N15 V DSS ID25 R DS(on) = = = 150 V 90 A 16 mΩ Symbol

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FDPF390N15A — N-Channel PowerTrench® MOSFET December 2013 FDPF390N15A N-Channel PowerTrench® MOSFET 150 V, 15 A, 40 mΩ Features • RDS(on) = 31 mΩ (

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Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T V

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) ·Fast Swi

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isc N-Channel MOSFET Transistor IXTP90N15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20mΩ@VGS=10V ·Fully characterized avalanche volta

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FDB0690N1507L N-Channel PowerTrench® MOSFET FDB0690N1507L N-Channel PowerTrench® MOSFET 150 V, 115 A, 6.9 mΩ Features „ Max rDS(on) = 6.9 mΩ at VGS

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Analog Power N-Channel 150-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

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Analog Power N-Channel 150-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and

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Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T V

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 16mΩ@VGS=10V ·100%

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FDB390N15A — N-Channel PowerTrench® MOSFET April 2015 FDB390N15A N-Channel PowerTrench® MOSFET 150 V, 27 A, 39 mΩ Features • RDS(on) = 33.5 mΩ (Typ

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Analog Power N-Channel 150-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

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isc N-Channel MOSFET Transistor IXTA90N15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20mΩ@VGS=10V ·Fully characterized avalanche volta

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Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 90N15 V DSS ID25 R DS(on) = = = 150 V 90 A 16 mΩ Symbol

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