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FDD390N15ALZ MOSFET

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Description

FDD390N15ALZ * N-Channel PowerTrench® MOSFET FDD390N15ALZ N-Channel PowerTrench® MOSFET 150 V, 26 A, 42 m January 2014 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.

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Features

* RDS(on) = 33.4 m (Typ. ) @ VGS = 10 V, ID = 26 A
* RDS(on) = 42.2 m (Typ. ) @ VGS = 4.5 V, ID = 20 A
* Fast Switching Speed
* Low Gate Charge, QG = 17.6 nC (Typ. )
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current

Applications

* Consumer Applicances
* LED TV
* Synchronous Rectification
* Uninterruptible Power Supplies
* Micro Solar Inverter G S D D-PAK D G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Sourc

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