IXTH90N15T
INCHANGE
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N-channel mosfet.
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IXTH90N15T - Power MOSFET
(IXYS)
Preliminary Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T
V.
IXTH96N20P - N-Channel MOSFET
(IXYS Corporation)
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 96N20P IXTQ 96N20P IXTT 96N20P
V DSS
ID25
RDS(on)
= 200 V = 96 A ≤ 24 mΩ
TO.
IXTH96N20P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 24mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variatio.
IXTH96N25T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 44mΩ(Max) ·Fast Swi.
IXTH96N25T - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH96N25T IXTQ96N25T IXTV96N25T
VDSS = ID25 =.
IXTH96P085T - Power MOSFET
(IXYS)
TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTA96P085T IXTP96P085T IXTH96P085T
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD.
IXTH02N250 - High Voltage Power MOSFETs
(IXYS)
High Voltage Power MOSFETs
IXTH02N250 IXTV02N250S
N-Channel Enhancement Mode Fast Intrinsic Diode
VDSS = ID25 = ≤RDS(on)
2500V 200mA 450Ω
TO-247 .
IXTH02N450HV - High Voltage Power MOSFET
(IXYS)
High Voltage Power MOSFET
IXTT02N450HV IXTH02N450HV
VDSS I
D25
RDS(on)
= 4500V = 200mA 625
N-Channel Enhancement Mode
Symbol
VDSS VDGR
VGSS V.
IXTH03N400 - High Voltage Power MOSFETs
(IXYS)
High Voltage Power MOSFETs
Preliminary Technical Information
IXTH03N400 IXTV03N400S
VDSS =
ID25 = ≤ RDS(on)
4000V 300mA 290Ω
N-Channel Enhancemen.
IXTH102N15T - Power MOSFET
(IXYS)
Trench Gate Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
T.