IXTH96P085T Datasheet - IXYS

IXTH96P085T Power MOSFET

TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA96P085T IXTP96P085T IXTH96P085T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 Maximum Ratings - 85 V - 85 V ±15 .

IXTH96P085T Features

* z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators z B

IXTH96P085T Datasheet (189.83 KB)