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IXTH96N20P, IXTQ96N20P Datasheet - IXYS Corporation

IXTH96N20P, IXTQ96N20P, N-Channel MOSFET

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 96N20P IXTQ 96N20P IXTT 96N20P V DSS ID25 RDS(on) = 200 V = 96 A ≤ 24 mΩ TO

Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min.
Typ.
Max.
200 V VGS(th) VDS = VGS,

IXTQ96N20P_IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXTH96N20P, IXTQ96N20P. Please refer to the document for exact specifications by model.
IXTH96N20P Datasheet Preview Page 2 IXTH96N20P Datasheet Preview Page 3

Datasheet Details

Part number:

IXTH96N20P, IXTQ96N20P

Manufacturer:

IXYS Corporation

File Size:

239.95 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTH96N20P, IXTQ96N20P.
Please refer to the document for exact specifications by model.

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