IXTK90N15 Datasheet - IXYS

IXTK90N15 N-Channel MOSFET

Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 90N15 V DSS ID25 R DS(on) = = = 150 V 90 A 16 mΩ Symbol Test conditions VDSS VDGR VGS VGSM ID25 I D(RMS) IDM I AR E AR EAS dv/dt PD T J TJM Tstg TL M d Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤.

IXTK90N15 Features

* Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure

* Internationalstandardpackage

* Fastswitchingtimes

IXTK90N15 Datasheet (83.93 KB)

IXTK90N15 Datasheet Preview — Preview of IXTK90N15 PDF

Datasheet Details

Part number:

IXTK90N15

Manufacturer:

IXYS

File Size:

83.93 KB

Description:

N-channel mosfet.

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IXTK90N15 N-Channel MOSFET IXYS

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