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FDD390N15A — N-Channel PowerTrench® MOSFET
FDD390N15A
N-Channel PowerTrench® MOSFET
150 V, 26 A, 40 m
April 2015
Features
• RDS(on) = 33.5 m ( Typ.)@ VGS = 10 V, ID = 26 A • Fast Switching Speed
• Low Gate Charge, QG = 14.3 nC( Typ.) • High Performance Trench Technology for Extremely Low
RDS(on) • High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.