9D1 datasheet | Specifications & PDF Download

IM69D127V11 - IP57 dust and water resistant PDM digital MEMS microphone

IM69D127V11 IP57 dust and water resistant PDM digital XENSIVTM MEMS microphone Description The IM69D127V11 is an ultra-high performance digital PDM M

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Infineon

IM69D128SV01 - Ultra-low power digital PDM XENSIV MEMS microphone

IM69D128SV01 Datasheet Ultra-low power digital PDM XENSIV™ MEMS microphone Features • Ultra-low current consumption in high performance mode (520µA)

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Panasonic

ERZV09D180 - Transient/Surge Absorbers

Varistors (ZNR Surge Absorber) Type D D type V series Features ●Large withstanding surge current capability in compact sizes ●Large “Energy Handling

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ESMT

F59D1G81MB - 1.8V NAND Flash Memory

ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT

F59D1G161MB - 1.8V NAND Flash Memory

ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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Infineon

IM69D130 - High performance digital XENSIV MEMS microphone

IM69D130 High performance digital XENSIVTM MEMS microphone Description The IM69D130 is designed for applications where low self-noise (high SNR), wid

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Infineon

IM69D120 - High performance digital XENSIV MEMS microphone

IM69D120 High performance digital XENSIVTM MEMS microphone Description The IM69D120 is designed for applications where low self-noise (high SNR), wid

(18 views)

ESMT

F59D1G81LB-45TG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT

F59D1G161LB-45TG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT

F59D1G161MA-45TG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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Vishay

489D155X020A - Solid Tantalum Capacitors

www.vishay.com 489D, 499D Vishay Sprague Resin-Coated, Radial-Lead Solid Tantalum Capacitors ELECTRICAL CHARACTERISTICS Operating Temperature: Type

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Vishay

489D106X003B - Solid Tantalum Capacitors

www.vishay.com 489D, 499D Vishay Sprague Resin-Coated, Radial-Lead Solid Tantalum Capacitors ELECTRICAL CHARACTERISTICS Operating Temperature: Type

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Samsung semiconductor

K9D1G08V0M - 64MB & 128MB SmartMedia Card

K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revisio

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Unisonic Technologies

UTC79D15 - 3 TERMINAL 0.5A NEGATIVE VOLTAGE REGULATOR

www.DataSheet4U.com UTC79DXX LINEAR INTEGRATED CIRCUIT 3 TERMINAL 0.5A NEGATIVE VOLTAGE REGULATOR DESCRIPTION The UTC 79DXX series of three-terminal

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ESMT

F59D1G161MB-45TG2M - 1.8V NAND Flash Memory

ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

(15 views)

ESMT

F59D1G81MA-45BCG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

(15 views)