UTC79D18 (Unisonic Technologies)
3 TERMINAL 0.5A NEGATIVE VOLTAGE REGULATOR
www.DataSheet4U.com
UTC79DXX LINEAR INTEGRATED CIRCUIT
3 TERMINAL 0.5A NEGATIVE VOLTAGE REGULATOR
DESCRIPTION
The UTC 79DXX series of three-terminal
(6 views)
F59D1G81MA-45BG2L (ESMT)
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
(6 views)
F59D1G81MB-45BG2M (ESMT)
1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
(5 views)
F59D1G81MB-45BCG2M (ESMT)
1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
(5 views)
F59D1G161MB-45BG2M (ESMT)
1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
(5 views)
F59D1G81MA-45TG2L (ESMT)
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
(5 views)
F59D1G161MA-45BG2L (ESMT)
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
(5 views)
F59D1G161MB (ESMT)
1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
(5 views)
489D157X6R3M (Vishay)
Solid Tantalum Capacitors
www.vishay.com
489D, 499D
Vishay Sprague
Resin-Coated, Radial-Lead Solid Tantalum Capacitors
ELECTRICAL CHARACTERISTICS Operating Temperature: Type
(4 views)
489D156X6R3B (Vishay)
Solid Tantalum Capacitors
www.vishay.com
489D, 499D
Vishay Sprague
Resin-Coated, Radial-Lead Solid Tantalum Capacitors
ELECTRICAL CHARACTERISTICS Operating Temperature: Type
(4 views)
489D157X003H (Vishay)
Solid Tantalum Capacitors
www.vishay.com
489D, 499D
Vishay Sprague
Resin-Coated, Radial-Lead Solid Tantalum Capacitors
ELECTRICAL CHARACTERISTICS Operating Temperature: Type
(4 views)
K9D1G08V0M (Samsung semiconductor)
64MB & 128MB SmartMedia Card
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revisio
(4 views)
PCD109D1xx (OEG)
(PCD Series) 15A Low Profile Power PC Board Relay
Catalog 1308961
www.DataSheet4U.com
Issued 6-01
PCD/PCDF series
15 Amp Low Profile Power PC Board Relay
Appliances, HVAC, Office Machines UL File No.
(4 views)
SR1-1206-9D1 (NTE)
1206 THICK FILM SURFACE MOUNT
1206 THICK FILM SURFACE MOUNT (250mW)
Features:
•
Value in Ohms
Wraparound termination with nickel barrier
NTE Stock Number Value in Ohms NTE Stock N
(4 views)
IM69D130 (Infineon)
High performance digital XENSIV MEMS microphone
IM69D130
High performance digital XENSIVTM MEMS microphone
Description
The IM69D130 is designed for applications where low self-noise (high SNR), wid
(4 views)
F59D1G81A (Elite Semiconductor)
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
(4 views)
F59D1G161A (Elite Semiconductor)
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
(4 views)
79D15 (Unisonic Technologies)
3-TERMINAL 0.5A NEGATIVE VOLTAGE REGULATOR
UNISONIC TECHNOLOGIES CO., LTD
79DXX
LINEAR INTEGRATED CIRCUIT
3 TERMINAL 0.5A NEGATIVE VOLTAGE REGULATOR
DESCRIPTION
The UTC 79DXX series of th
(4 views)
F59D1G81MB-45TG2M (ESMT)
1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
(4 views)
F59D1G81MB-45BUG2M (ESMT)
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
(4 views)