·
76 Hits
Current C
IDM
Continuous Drain Current
TA=25°C TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.01mH C
EAS
VDS Spike Power Dissipat...
·
55 Hits
25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Max Q1
Max Q2
30
±20 ±20
16 18
12 14
64 72
13 15
7.8...
·
25 Hits
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.01mH C
VDS
30
3...
·
18 Hits
HB GaN FETs integrated AHB control circuit and half-bridge
driver integrated Up to 800KHz switching frequency Standby power consumption less t...
·
17 Hits
HB GaN FETs integrated AHB control circuit and half-bridge
driver integrated Up to 800KHz switching frequency Standby power consumption less t...
·
17 Hits
lanche energy L=0.01mH
EAS
18
12
TC=25°C Power Dissipation B TC=100°C
PD
52 21
26 10
TA=25°C Power Dissipation A TA=70°C
PDSM
3.4 2.2
3.1 2...
·
13 Hits
HB GaN FETs integrated AHB control circuit and half-bridge
driver integrated Up to 800KHz switching frequency Standby power consumption less t...
·
12 Hits
.1mH C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature ...
·
12 Hits
TA=25°C TA=70°C
Avalanche energy L=0.01mH
C
IDSM
IAS EAS
VDS Spike
10µs
VSPIKE
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipa...
·
12 Hits
HB GaN FETs integrated AHB control circuit and half-bridge
driver integrated Up to 800KHz switching frequency Standby power consumption less t...
·
11 Hits
C TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain Current
TA=25°C TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.01mH C
E...
·
9 Hits
400 Watts (tp = 8/20µs) of power handling capability to accommodate the higher transient voltage levels which may be expected in extended common mode ...
·
9 Hits
0°C
ID
Pulsed Drain Current C
IDM
Continuous Drain Current
TA=25°C TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.01mH C
EAS
VDS...
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