B09N03 Datasheet | Specifications & PDF Download

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S

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EMB09N03V Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 30V RDSON (MAX.

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  D RDSON (MAX.)  9mΩ  ID  50A    UIS, Rg 100% 

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S

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EMB09N03VAT N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 10A G UIS, Rg

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 50A G UIS, Rg 100% Tested

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CYStech Electronics Corp. Spec. No. : C709H8 Issued Date : 2009.05.07 Revised Date : 2014.11.10 Page No. : 1/10 N-Channel Logic Level Enhancement Mo

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IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excelle

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www.DataSheet4U.com IPB09N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) fo

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 14A G UIS, Rg 100% Tested

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