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B3-12 LAND MOBILE

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ON Semiconductor Logo ON Semiconductor

NGTB30N120L2WG - IGBT

NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct
Rating: 1 (8 votes)
Infineon Logo Infineon

IFS75B12N3E4_B31 - IGBT-Module

Technische Information / Technical Information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ™base Modul mit Trench/Feldstopp IGBT4, Emitter Contr
Rating: 1 (6 votes)
STMicroelectronics Logo STMicroelectronics

STGB3NC120HD - IGBT

STGB3NC120HD STGF3NC120HD, STGP3NC120HD 7 A, 1200 V very fast IGBT with ultrafast diode Features ■ High voltage capability ■ High speed ■ Very soft u
Rating: 1 (6 votes)
Infineon Logo Infineon

IFS150B12N3E4_B31 - IGBT

Technische Information / Technical Information IGBT-Module IGBT-modules IFS150B12N3E4_B31 Vorläufige Daten / Preliminary Data Typische Anwendungen
Rating: 1 (6 votes)
Motorola Logo Motorola

MTB3N120E - TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N120E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De
Rating: 1 (5 votes)

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