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Toshiba
TB31224F - RF-Chip
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.
Fairchild Semiconductor
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Yangzhou Yangjie
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TB31214FNG TB31214FNG 2005-04-05 www.DataSheet4U.net TB31214FNG 2005-04-05 TB31214FNG 2005-04-05 TB31214FNG 2005-04-05 TB31214FNG 2005-04-05.
ABLIC
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Motorola
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Advantech
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Nichicon
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IXYS Corporation
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GenX3TM 1200V IGBT High speed Low Vsat PT IGBTs 3-20 kHz switching IXGH30N120B3D1 IXGT30N120B3D1 VCES IC110 VCE(sat) tfi(typ) = 1200V = 30A ≤£ 3.5V.
Infineon
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Infineon
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Pericom Semiconductor
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Pericom Semiconductor
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Tyco
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Features • SPST through DPDT contact arrangements. • Immersion cleanable and flux tight versions available. • VDE 10mm spacing, 5kV dielectric, coil t.
Fairchild Semiconductor
HGT1S12N60B3DS - N-Channel IGBT
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This fam.
