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IXYH40N120B3D1 IGBT

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Description

1200V XPTTM IGBT GenX3TM w/ Diode IXYH40N120B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES = IC110 = V ≤CE(sat) tfi(typ) = 1200.

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Datasheet Specifications

Part number
IXYH40N120B3D1
Manufacturer
IXYS
File Size
181.47 KB
Datasheet
IXYH40N120B3D1-IXYS.pdf
Description
IGBT

Features

* z Optimized for 5-30kHZ Switching z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z Anti-Parallel Ultra Fast Diode z Avalanche Rated z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specifie

Applications

* z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2013 IXYS CORPORATION, All Rights Reserved DS100413B(03/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 40A, VCE = 10V, Note 1 Cies Coes Cres VCE = 2

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