z Optimized for 5-30kHZ Switching z Square RBSOA z Positive Thermal Coefficient of
Vce(sat) z Anti-Parallel Ultra Fast Diode z Avalanche Rated z International Standard Package
Advantages
z High Power Density z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1 TJ
=
150°C
Characteris.
