BSS138-G Datasheet | Specifications & PDF Download

BSS138K 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 0.31A Description and Appl

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May 1995 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect tran

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Features: •  Low On-Resisrance •  Low Gate Threshold Voltage •  Low Input Capacitance

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SOT-  Plastic-Encapsulate MOSFETS BSS138.5 N-Channel 50-V(D-S) MOSFET FEATURE Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed L

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N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138 General Description These N−Channel enhancement mode field effect transistors ar

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http://www.ncepower.com Pb Free Product BSS138K NCE N-Channel Enhancement Mode Power MOSFET General Features ● VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @

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BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor May 2013 BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transis

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UNISONIC TECHNOLOGIES CO., LTD BSS138 N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE Power MOSFET 3  DESCRIPTION This device employs advanced MOSFET techno

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Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet htt

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Main Product Characteristics BVDSS 50V RDS(ON) ID 3.5Ω 220mA Features and Benefits § Advanced MOSFET process technology § Ideal for high efficien

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SMD Power MOSFET Transistor (N-Channel) BSS138 SMD Power MOSFET Transistor (N-Channel) Features • Low On-Resistance:3.5Ω • Low input capacitance:40pF

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N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138K Features • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacit

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SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET FEATURE Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed Low

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Analog Power N-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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BSS138-NL-VB BSS138-NL-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V ID (mA

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BSS138AKA 6 February 2013 SO T2 3 60 V, single N-channel Trench MOSFET Product data sheet 1. General description N-channel enhancement mode Field-

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BSS138Q-7-F-VB BSS138Q-7-F-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V ID

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LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N–Channel SOT–23 Typical applications are dc–dc converters, power management in portable

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BSS138P 60 V, 360 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhan

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BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhanc

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