BU508 Datasheet | Specifications & PDF Download

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BU208A ® BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s HIGH VOLTAGE CAPABILITY (> 150

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High volta

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508D www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High volt

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www.DataSheet4U.com BU508AF High voltage NPN Power transistor for standard Definition CRT display Preliminary Data Features ■ ■ ■ ■ ■ ■ ■ State-of-

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX GENERAL DESCRIPTION High voltage, high-speed switching npn

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www.DataSheet4U.com UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR TO-3PML 1. 2. BASE COLLECTOR EMITTER SILICON DIFFUSED POWER TRANSISTOR DESCRIPTI

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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 NPN POWER TRANSISTORS BU508F, BU50

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Transys Electronics L I M I T E D NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package www.DataSheet4U.com C B E

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508AW www.datasheet4u.com DESCRIPTION ·With TO-247 package ·High vol

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508AX www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·High vo

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508DF www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High vo

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508DW www.datasheet4u.com DESCRIPTION ·With TO-247 package ·High vol

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SEMICONDUCTORS NPN BU508DF SILICON DIFFUSED POWER TRANSISTOR The BU508DF is a NPN epitaxial-base transistor in TO3PFa package with integrated efficie

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Silicon Power Transistor BU508D Technical Data Typical Applications : These devices are designed for horizontal deflection output stages of large scr

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot

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isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Integrated Diode ·Minimum Lot-to-

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isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Integrated Diode ·Minimum Lot-to-

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BU508A, 508D Horizontal Deflection Transistors High Voltage Switching Specifically designed for use in large screen colour deflection circuits. Feat

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isc Silicon NPN Power Transistor BU508AT DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 1

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