BV1 Datasheet | Specifications & PDF Download

Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 55 ns • Sector Erase Architecture – Thirty-one 32K Word (64K B

(32 views)

Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 3

(26 views)

Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 32K Word (64K Bytes) Sect

(23 views)

Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 55 ns • Sector Erase Architecture – Thirty-one 32K Word (64K B

(22 views)

CY7C1305BV18 CY7C1307BV18 18-Mbit Burst of 4 Pipelined SRAM with QDR™ Architecture Features Functional Description • Separate independent Read and

(22 views)

www.DataSheet4U.com Features • • • • • • • • • • Single-voltage Operation Read/Write Operation: 2.7V to 3.6V (BV). 3.0V to 3.6V(LV) Fast Read Access

(22 views)

LH51BV1000J FEATURES • Access time: 70 ns (MAX.) • Current consumption: Operating: 30 mA (MAX.) 5 mA (MAX.) (tRC, tWC = 1 µs) Standby: 60 µA (MAX.) •

(21 views)

Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou

(20 views)

Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou

(20 views)

(20 views)

www.DataSheet4U.com Features • • • • • • • • • • Single-voltage Operation Read/Write Operation: 2.7V to 3.6V (BV). 3.0V to 3.6V(LV) Fast Read Access

(20 views)

Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 3

(19 views)

Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 3

(19 views)

AT28BV16 Features • • • • • • • • • 2.7 to 3.6V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 µA CMOS Standby Cu

(19 views)

www.DataSheet4U.com Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Archit

(19 views)

CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 18-Mbit QDR™-II SRAM 2-Word Burst Architecture Features ■ Separate independent read and write

(18 views)

Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou

(17 views)

Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 3

(17 views)

Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 32K Word (64K Bytes) Sect

(17 views)

www.DataSheet4U.com Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Archit

(17 views)