BV1 Datasheet | Specifications & PDF Download

RBV15005-RBV1510 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 15.0 A Features Rating to 1000V PRV Surge overload rating to 200 Am

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BV 8, BV 12, BV 16 Axial lead diode High voltage silicon rectifier diodes BV 8, BV 12, BV 16 Forward Current: 0,5 A Reverse Voltage: 8000 to 16000 V

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BV 8, BV 12, BV 16 Axial lead diode High voltage silicon rectifier diodes BV 8, BV 12, BV 16 Forward Current: 0,5 A Reverse Voltage: 8000 to 16000 V

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Automotive IPD series 1ch High-side Switch IC BV1HD090FJ-C Features  AEC-Q100 qualified (Note 1)  Built-in overcurrent limiting circuit (OCP)  Bu

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CY7C1303BV18 CY7C1306BV18 18-Mbit Burst of 2 Pipelined SRAM with QDR™ Architecture Features Functional Description • Separate independent Read and

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Transient Voltage Suppressor Features IEC 61000-4-2(ESD)±15KV(air), ±8KV(contact) 150Watts peak pulse power (tp=8/20μS) Ultra low capacitance:1.5pF ma

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CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 18-Mbit QDR™-II SRAM 2-Word Burst Architecture Features ■ Separate independent read and write

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Datasheet Automotive IPD Series 1ch Low Side Switch IC BV1LB085FJ-C Features ■ Built-in overcurrent limiting circuit(OCP) ■ Built-in thermal shutdow

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CY7C1411BV18, CY7C1426BV18 www.DataSheet4U.com CY7C1413BV18, CY7C1415BV18 36-Mbit QDR™-II SRAM 4-Word Burst Architecture Features ■ Configurations C

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LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode Designed for general frequency control and tuning applications; providing solid–state reliability in

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CY7C1422BV18, CY7C1429BV18 CY7C1423BV18, CY7C1424BV18 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features ■ ■ ■ ■ ■ Functional Description Th

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Production specification Silicon Bridge Rectifiers RBV15005--RBV1510 FEATURES  Rating to 1000V PRV  Surge overload rating to 200 Amperes peak  I

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Surface Mount Schottky Barrier Rectifier COMCHIP www.comchiptech.com CDBV120 THRU CDBV140 Voltage Range 20 to 40V Current 1.0 Ampere Features High c

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CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 18-Mbit QDR™-II SRAM 2-Word Burst Architecture Features ■ Separate independent read and write

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CY7C1411BV18, CY7C1426BV18 www.DataSheet4U.com CY7C1413BV18, CY7C1415BV18 36-Mbit QDR™-II SRAM 4-Word Burst Architecture Features ■ Configurations C

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CY7C1316BV18 CY7C1916BV18 CY7C1318BV18 CY7C1320BV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture Features • 18-Mbit density (2M x 8, 2M x 9, 1M x 18

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Datasheet Automotive IPD 1ch Low Side Switch BV1LA025EFJ-C Features ■ Built-in Dual TSD*1 ■ AEC-Q100 Qualified*2 ■ Built-in Over Current Protection

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CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18 18-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mbit densit

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CY7C1303BV18 CY7C1306BV18 18-Mbit Burst of 2 Pipelined SRAM with QDR™ Architecture Features Functional Description • Separate independent Read and

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 3

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