BV1 - Phase sequence relay Application Supervision.
ATMEL Corporation
AT49BV1614T - 16-Megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou.
ON Semiconductor
MBV109T1 - Silicon Epicap Diodes
ON Semiconductort Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacem.
Cypress Semiconductor
CY7C1305BV18 - 18-Mbit Burst of 4 Pipelined SRAM
CY7C1305BV18 CY7C1307BV18 18-Mbit Burst of 4 Pipelined SRAM with QDR™ Architecture Features Functional Description • Separate independent Read and.
Cypress Semiconductor
CY7C1917BV18 - 1.8V Synchronous Pipelined SRAM
CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18 18-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mbit densit.
EIC discrete Semiconductors
RBV1000D - SILICON BRIDGE RECTIFIERS
RBV1000D - RBV1010D PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliab.
EIC discrete Semiconductors
RBV1006 - SILICON BRIDGE RECTIFIERS
RBV1000 - RBV1010 PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliabil.
EIC discrete Semiconductors
RBV1500D - SILICON BRIDGE RECTIFIERS
RBV1500D - RBV1510D PRV : 50 - 1000 Volts Io : 15 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliab.
EIC discrete Semiconductors
RBV1506D - SILICON BRIDGE RECTIFIERS
RBV1500D - RBV1510D PRV : 50 - 1000 Volts Io : 15 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliab.
Cypress Semiconductor
CY7C1303BV18 - 18-Mbit Burst of 2 Pipelined SRAM
CY7C1303BV18 CY7C1306BV18 18-Mbit Burst of 2 Pipelined SRAM with QDR™ Architecture Features Functional Description • Separate independent Read and.
Leshan Radio Company
MBV109T1 - Silicon Epicap Diode
LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode Designed for general frequency control and tuning applications; providing solid–state reliability in .
Semikron
BV16 - Axial lead diode
BV 8, BV 12, BV 16 Axial lead diode High voltage silicon rectifier diodes BV 8, BV 12, BV 16 Forward Current: 0,5 A Reverse Voltage: 8000 to 16000 V .
ATMEL Corporation
AT49BV161T - (AT49xV160 / AT49xV161) Flash Memory
www.DataSheet4U.com Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Archit.
Comchip Technology
CDBV140-G - (CDBV120-G - CDBV140-G) SMD Schottky Barrier Diode
SMD Schottky Barrier Diode SMD Diodes Specialist CDBV120-G THRU. CDBV140-G I O =1.0A V R =20 ~ 40V RoHS Device Features -For use in low voltage, high.
Cypress Semiconductor
CY7C1420BV18 - 36-Mbit DDR-II SRAM 2-Word Burst Architecture
www.DataSheet4U.com CY7C1416BV18, CY7C1427BV18 CY7C1418BV18, CY7C1420BV18 36-Mbit DDR-II SRAM 2-Word Burst Architecture Features ■ ■ ■ ■ ■ Function.
Cypress Semiconductor
CY7C1422BV18 - 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1422BV18, CY7C1429BV18 CY7C1423BV18, CY7C1424BV18 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features ■ ■ ■ ■ ■ Functional Description Th.
Cypress Semiconductor
CY7C1424BV18 - 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1422BV18, CY7C1429BV18 CY7C1423BV18, CY7C1424BV18 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features ■ ■ ■ ■ ■ Functional Description Th.
SeCoS
RBV1002S - Molding Single-Phase Bridge Rectifier
D10SB10 ~ D10SB100 Elektronische Bauelemente 100 V ~ 1000 V 10.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier RoHS Complian.
Winsem Technology
WTBV116DL - POWER TRANSISTOR
Winsem Technology Corp. High Voltage NPN Transistor WTBV116DL / WTBV116DI POWER TRANSISTOR TO-92 Pin Definition 1. Emitter 2. Collector 3. Base Feat.
Winsem Technology
WTBV116DI - POWER TRANSISTOR
Winsem Technology Corp. High Voltage NPN Transistor WTBV116DL / WTBV116DI POWER TRANSISTOR TO-92 Pin Definition 1. Emitter 2. Collector 3. Base Feat.
Bencent
BV15C - Transient Voltage Suppressor
Transient Voltage Suppressor Features IEC 61000-4-2(ESD)±15KV(air), ±8KV(contact) 150Watts peak pulse power (tp=8/20μS) Ultra low capacitance:1.5pF ma.
