BV1 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state rel

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 3

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LH51BV1000J FEATURES • Access time: 70 ns (MAX.) • Current consumption: Operating: 30 mA (MAX.) 5 mA (MAX.) (tRC, tWC = 1 µs) Standby: 60 µA (MAX.) •

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Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 55 ns • Sector Erase Architecture – Thirty-one 32K Word (64K B

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CY7C1303BV18 CY7C1306BV18 18-Mbit Burst of 2 Pipelined SRAM with QDR™ Architecture Features Functional Description • Separate independent Read and

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Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou

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www.DataSheet4U.com Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Archit

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Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 32K Word (64K Bytes) Sect

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Transient Voltage Suppressor Features IEC 61000-4-2(ESD)±15KV(air), ±8KV(contact) 150Watts peak pulse power (tp=8/20μS) Ultra low capacitance:1.5pF ma

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Datasheet Load Switch IC 34 V Breakdown Voltage Variable Overcurrent Detection 1ch Load Switch BV1HAL85EFJ General Description BV1HAL85EFJ is a sin

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 3

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Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou

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BV 8, BV 12, BV 16 Axial lead diode High voltage silicon rectifier diodes BV 8, BV 12, BV 16 Forward Current: 0,5 A Reverse Voltage: 8000 to 16000 V

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. MAXIMUM RATINGS Rating Reverse Voltage Forward Current Symbol VR if . THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation,

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 3

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Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Thirty-one 32K Word (64K Bytes) Sect

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tun

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CY7C1305BV18 CY7C1307BV18 18-Mbit Burst of 4 Pipelined SRAM with QDR™ Architecture Features Functional Description • Separate independent Read and

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CY7C1392BV18, CY7C1992BV18 CY7C1393BV18, CY7C1394BV18 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features ■ 18-Mbit density (2M x 8, 2M x 9, 1

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