Brilliance Semiconductor Datasheet | Specifications & PDF Download

OPA657 OPA 657 SBOS197B – DECEMBER 2001 – REVISED MAY 2004 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES q q q q q HIGH GAIN BANDWIDTH

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OPA657 OPA 657 SBOS197B – DECEMBER 2001 – REVISED MAY 2004 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES q q q q q HIGH GAIN BANDWIDTH

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Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit Pb-Free and Green package materials are compliant to RoHS www.DataSheet4U.com BH616UV16

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www.DataSheet4U.com BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1027 • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 32K X 8 bit „ DESCRIPTION BS62LV256 • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power con

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Ultra Low Power/High Speed CMOS SRAM 1M X 8 bit Green package materials are compliant to RoHS www.DataSheet4U.com BH62UV8001 n FEATURES Ÿ Wide VCC l

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Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit Pb-Free and Green package materials are compliant to RoHS www.DataSheet4U.com BH616UV8010 n FEATU

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 8 bit „ DESCRIPTION BS62LV1023 • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consum

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ DESCRIPTION BS616LV2015 • Very low operation voltage : 4.5 ~ 5.5V • Very low power

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( DataSheet : www.DataSheet4U.com ) BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 512K X 8 bit BS62LV4006 • Wide Vcc operation voltage : 2.4V ~

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ DESCRIPTION BS616LV2011 • Very low operation voltage : 2.4 ~ 5.5V • Very low power

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Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit Pb-Free and Green package materials are compliant to RoHS www.DataSheet4U.com BH616UV1610 n FEATURE

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 32K X 8 bit „ DESCRIPTION BS62LV2563 • Wide Vcc operation voltage : 2.4V ~ 3.6V • Very low power co

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable „ DESCRIPTION BS616LV2025 • Very low operation voltage : 4.5 ~

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable „ DESCRIPTION BS616LV4023 • Very low operation voltage : 2.4 ~

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Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit Green package materials are compliant to RoHS www.DataSheet4U.com BH616UV8011 n FEATURES Ÿ Wide V

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 32K X 8 bit „ DESCRIPTION BS62LV2565 • Wide Vcc operation voltage : 4.5V ~ 5.5V • Very low power co

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BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit BS616LV2012 „ FEATURES • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption :

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B SI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ DESCRIPTION BS616LV2013 • Very low operation voltage : 2.4 ~ 3.6V • Very low power

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable „ DESCRIPTION BS616LV4021 • Very low operation voltage : 2.4 ~

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