C2610 Datasheet | Specifications & PDF Download

2SC2610 Silicon NPN Triple Diffused Application • High voltage amplifier • TV Video output Outline RENESAS Package code: PRSS0003DC-A (Package name: T

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2SC2610 Silicon NPN Triple Diffused Application • High voltage amplifier • TV Video output Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1

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FAC2610X Fixed Attenuator Chip Fixed Attenuator Chip  DC to 26.5 GHz  10 dB  200mW Features  Thin film  High attenuation accuracy  Small VSWR

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MOSFET – N-Channel, UltraFET Trench 200 V, 9.5 A, 200 mW FDMC2610 General Description This N−Channel MOSFET is a rugged gate version of onsemi‘s advan

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www.DataSheet4U.com FDMC2610 N-Channel UltraFET Trench® MOSFET September 2006 FDMC2610 N-Channel UltraFET Trench® MOSFET 200V, 9.5A, 200mΩ Features

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LTC2600/LTC2610/LTC2620 Octal 16-/14-/12-Bit Rail-to-Rail DACs in 16-Lead SSOP FEATURES n Smallest Pin-Compatible Octal DACs: LTC2600: 16 Bits LTC26

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VBGC2610N Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -60 VGS = -10 V 19 0.10 5.4 11 Single

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www.DataSheet.co.kr Ordering number : ENA0104 VEC2610 VEC2610 Features • • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Devi

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PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an a

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UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 DUAL SCHOTTKY DIODE BRIDGE FEATURES D Monolithic Eight-Diode Array D Exceptional Efficien

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PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an a

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2SC2610 Silicon NPN Triple Diffused REJ03G0700-0200 (Previous ADE-208-1068) Rev.2.00 Aug.10.2005 Application • High voltage amplifier • TV Video outp

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Applications  VSAT  Point-to-Point Radio  Test Equipment & Sensors Product Features  RF Frequency Range: 10 – 15.4 GHz  IF Frequency: DC – 4 GHz

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