logo

CS18N Datasheet, Features, Application

CS18N SILICON CONTROLLED RECTIFIER

CS18B CS18D CS18M CS18N SILICON CONTROLLED RECTIFI.

JILIN SINO-MICROELECTRONICS

JCS18N50FH - N-CHANNEL MOSFET

N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie.
1.0 · rating-1
CR Micro

CS18N20A4RZ-G - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS18N20 A4RZ-G General Description: CS18N20 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by th.
1.0 · rating-1
JILIN SINO-MICROELECTRONICS

JCS18N50WH - N-CHANNEL MOSFET

N N- CHANNEL MOSFET R JCS18N50WH MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 19 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High effici.
1.0 · rating-1
CR Micro

CS18N20A4R - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS18N20 A4R General Description: CS18N20 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a.
1.0 · rating-1
CR Micro

CS18N50A8R - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS18N50 A8R General Description: CS18N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self.
1.0 · rating-1
JILIN SINO-MICROELECTRONICS

JCS18N50H - N-CHANNEL MOSFET

N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie.
1.0 · rating-1
Central Semiconductor

CS18N - SILICON CONTROLLED RECTIFIER

CS18B CS18D CS18M CS18N SILICON CONTROLLED RECTIFIER 1 AMP, 200 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICOND.
1.0 · rating-1
JILIN SINO

JCS18N25F - N-CHANNEL MOSFET

N-CHANNEL MOSFET JCS18N25C MAIN CHARACTERISTICS Package ID VDSS Rdson-max@Vgs=10V) Qg-typ 18A 250V 230mΩ 17.48nC   UPS APPLICATIONS  .
1.0 · rating-1
Huajing Microelectronics

CS18N20A8R - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS18N20 A8R General Description: CS18N20 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self.
1.0 · rating-1
JILIN SINO

JCS18N25C - N-CHANNEL MOSFET

N-CHANNEL MOSFET JCS18N25C MAIN CHARACTERISTICS Package ID VDSS Rdson-max@Vgs=10V) Qg-typ 18A 250V 230mΩ 17.48nC   UPS APPLICATIONS  .
1.0 · rating-1
JILIN SINO

JCS18N25V - N-CHANNEL MOSFET

N-CHANNEL MOSFET JCS18N25C MAIN CHARACTERISTICS Package ID VDSS Rdson-max@Vgs=10V) Qg-typ 18A 250V 230mΩ 17.48nC   UPS APPLICATIONS  .
1.0 · rating-1
JILIN SINO

JCS18N25R - N-CHANNEL MOSFET

N-CHANNEL MOSFET JCS18N25C MAIN CHARACTERISTICS Package ID VDSS Rdson-max@Vgs=10V) Qg-typ 18A 250V 230mΩ 17.48nC   UPS APPLICATIONS  .
1.0 · rating-1
CR Micro

CS18N20FA9R - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS18N20F A9R General Description: CS18N20F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the se.
1.0 · rating-1
CR Micro

CS18N20A3R - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS18N20 A3R General Description: CS18N20 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a.
1.0 · rating-1
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts