CS18B CS18D CS18M CS18N SILICON CONTROLLED RECTIFI.
JCS18N50FH - N-CHANNEL MOSFET
N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie.CS18N20A4RZ-G - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS18N20 A4RZ-G General Description: CS18N20 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by th.JCS18N50WH - N-CHANNEL MOSFET
N N- CHANNEL MOSFET R JCS18N50WH MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 19 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High effici.CS18N20A4R - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS18N20 A4R General Description: CS18N20 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a.CS18N50A8R - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS18N50 A8R General Description: CS18N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self.JCS18N50H - N-CHANNEL MOSFET
N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie.CS18N - SILICON CONTROLLED RECTIFIER
CS18B CS18D CS18M CS18N SILICON CONTROLLED RECTIFIER 1 AMP, 200 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICOND.JCS18N25F - N-CHANNEL MOSFET
N-CHANNEL MOSFET JCS18N25C MAIN CHARACTERISTICS Package ID VDSS Rdson-max@Vgs=10V) Qg-typ 18A 250V 230mΩ 17.48nC UPS APPLICATIONS .CS18N20A8R - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS18N20 A8R General Description: CS18N20 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self.JCS18N25C - N-CHANNEL MOSFET
N-CHANNEL MOSFET JCS18N25C MAIN CHARACTERISTICS Package ID VDSS Rdson-max@Vgs=10V) Qg-typ 18A 250V 230mΩ 17.48nC UPS APPLICATIONS .JCS18N25V - N-CHANNEL MOSFET
N-CHANNEL MOSFET JCS18N25C MAIN CHARACTERISTICS Package ID VDSS Rdson-max@Vgs=10V) Qg-typ 18A 250V 230mΩ 17.48nC UPS APPLICATIONS .JCS18N25R - N-CHANNEL MOSFET
N-CHANNEL MOSFET JCS18N25C MAIN CHARACTERISTICS Package ID VDSS Rdson-max@Vgs=10V) Qg-typ 18A 250V 230mΩ 17.48nC UPS APPLICATIONS .CS18N20FA9R - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS18N20F A9R General Description: CS18N20F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the se.CS18N20A3R - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS18N20 A3R General Description: CS18N20 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a.