Chino-Excel Technology Datasheet | Specifications & PDF Download

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CED61A3/CEU61A3 Jan. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 30V , 40A , RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20m

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell

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CEP6060R/CEB6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for e

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CEP7030L/CEB7030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 65A,RDS(ON) = 8mΩ @VGS = 10V. RDS(ON) = 12mΩ @VGS = 4.5V. Super h

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CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEPF640 CEBF640 CEFF640 VDSS 200V 200V 200V RDS(ON) 0.15Ω

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CET3055L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 5V. High dense cell d

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P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -28A, RDS(ON) = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. Super high dense cell

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CEM4410B Dec. 2002 N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 12.5A , RDS(ON)=9.5m Ω @VGS=10V. RDS(ON)=14m Ω @VGS=4.5V. Sup

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CET9435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.3A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. High dens

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V. High dense cell design

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P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.9A, RDS(ON) = 57mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. High dense cell desi

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CED05P03/CEU05P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -15A, RDS(ON) = 70mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. S

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