Chino-Excel Technology Datasheet | Specifications & PDF Download

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P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -28A, RDS(ON) = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. Super high dense cell

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CED61A3/CEU61A3 Jan. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 30V , 40A , RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20m

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CED61A3/CEU61A3 Jan. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 30V , 40A , RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20m

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CEA3055L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 3.7A, RDS(ON) = 100mΩ @VGS = 10V. RDS(ON) = 120mΩ @VGS = 4.5V. High dense c

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CEP1012/CEB1012 N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 15A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for e

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CEP4060A/CEB4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for e

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CEP4060AL/CEB4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A,RDS(ON) = 75mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5.0V. Supe

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