D-3003 Datasheet | Specifications & PDF Download

ST13003, ST13003-K High voltage fast-switching NPN power transistor 3 2 1 SOT-32 Figure 1. Internal schematic diagram C(2) B(3) Datasheet - producti

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13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)

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ETA3003 Inductive Cell Balancer IC with Balancing Current Up to 2A DESCRIPTION FEATURES ETA3003 is an inductive cell balancer. Unlike conventional

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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100

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Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTION High-voltage, high-speed planar-pass

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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS MJE13003 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for h

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UNISONIC TECHNOLOGIES CO., LTD MJE13003-XS NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power s

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STN83003 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Very high switching speed Application ■ Electronics ba

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www.DataSheet4U.com YCL Single 10Base-T/100Base-TX Transformer Design for varied turn ratio on Tx side ♦Designed to meet IEEE802.3u requirement. ♦Pr

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MAX3000E/MAX3001E/ AVAILABLE MAX3002–MAX3012 +1.2V to +5.5V, ±15kV ESD-Protected, 0.1µA, 35Mbps, 8-Channel Level Translators General Description T

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UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-volt

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Free Datasheet http://www.datasheet4u.com/

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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. P13003 Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Fluorescent Lamp、C

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BurrĆBrown Products from Texas Instruments PCM3002 PCM3003 SBAS079A – OCTOBER 2000 – REVISED OCTOBER 2004 16/20-BIT SINGLE-ENDED ANALOG INPUT/OUTPUT

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LM13003C NPN/NPN High Voltage Switching Transistor ●：■■■■ROHS ●FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■ROHS COMPLIANT

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MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fa

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HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce

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