D-3003 Datasheet | Specifications & PDF Download

ST13003, ST13003-K High voltage fast-switching NPN power transistor 3 2 1 SOT-32 Figure 1. Internal schematic diagram C(2) B(3) Datasheet - producti

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13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)

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Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF

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Electrical Characteristics Standard Resistance Range: 10Ω ~ 2,0MΩ Resistance Tolerance: +/-10% Standard Absolute Minimum Resistance: ≤1% or 2Ω Contact

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ETA3003 Inductive Cell Balancer IC with Balancing Current Up to 2A DESCRIPTION FEATURES ETA3003 is an inductive cell balancer. Unlike conventional

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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100

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30V, 30A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFN3003T uses advanced trench technology and design to provide excellent RDS(on) with low gate

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-30V, -30A P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFN3003PT use advanced trench technology and design to provide excellent RDS(on) with low ga

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HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Exce

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BurrĆBrown Products from Texas Instruments PCM3002 PCM3003 SBAS079A – OCTOBER 2000 – REVISED OCTOBER 2004 16/20-BIT SINGLE-ENDED ANALOG INPUT/OUTPUT

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STN83003 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Very high switching speed Application ■ Electronics ba

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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS MJE13003 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for h

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UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-volt

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Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTION High-voltage, high-speed planar-pass

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isc Silicon NPN Power Transistor MJE13003A DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage

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ÉîÛÚÊÐÁú¾§Î¢µç×ÓÏÞ¹«Ë TO-126 Plastic-Encapsulate Transistors ALJ13003 MAXI VCBO VCEO VEBO IC PC Tj Tstg TRANSISTOR(NPN) MAXIMUM RATINGS(Ta=25℃ unle

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MJE13003DG5 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126(R) NPN 。Silicon NPN transistor in a TO-126(R) Plastic Package.  / Features ，。 High

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