D1006 Datasheet | Specifications & PDF Download

2 Phase Hybrid Stepping Motor 42D SERIES (For large quantity orders) □42mm 1.8° Bipolar STA-42D series can achieve larger torque than existing motor

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C6D10065A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • New 6th Generation Technology • • Low Forward Voltage Drop (VF) Zero Reverse

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TetraFET DMD1006 DMD1006-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D 2 1 A 3 G( 2 pls) F M K J I D2 PIN 1 SOURCE PIN 3 GATE

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C6D10065A 6th Generation 650 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky

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C6D10065Q 6th Generation 650 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Ba

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DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change wi

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ARTCHIP SEMICONDUCTOR Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surfa

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WTE POWER SEMICONDUCTORS ED1002CS – ED1006CS 10A DPAK SURFACE MOUNT SUPER FAST RECTIFIER Features Glass Passivated Die Construction A Ideally

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Product Summary VRRM 650
V IF (TC=155°C) 10 A QC 29 nC Features  Extremely low reverse current  No reverse recovery current  Temperature ind

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www.DataSheet4U.com m o YOUDA INTEGRATED CIRCUIT .c U 4 t e 18W HI-FI AUDIO AMPLIFIER¡ª e h S a t DESCRIPTION a D The . YD1006 is a monolithic audio

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SMD Unshielded Power Inductors - SCD Series SCD Series Features  RoHS compliant  High saturation open type wire wound power inductor  Suitable for

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LED Displays Numeric 7-segment Single Digit Display 0.3” PART NO CHIP material LSD3211-XX LSD3212-XX LSD3214-XX LSD3215-XX LSD3213-XX LSD3221-XX LSD32

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LED Displays Numeric 7-segment Single Digit Display 0.3” PART NO CHIP material LSD3211-XX LSD3212-XX LSD3214-XX LSD3215-XX LSD3213-XX LSD3221-XX LSD32

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LED Displays Numeric 7-segment Single Digit Display 0.3” PART NO CHIP material LSD3211-XX LSD3212-XX LSD3214-XX LSD3215-XX LSD3213-XX LSD3221-XX LSD32

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TetraFET DMD1006 DMD1006-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D 2 1 A 3 G( 2 pls) F M K J I D2 PIN 1 SOURCE PIN 3 GATE

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E6D10065A E-Series Automotive 650 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schott

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General Description The WSD1006GDN22 is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON

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C3D10065I Silicon Carbide Schottky Diode VRRM = 650 V Z-Rec™ Rectifier Features Package IF (TC=125˚C) = 10 A Qc = 25 nC • •

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