D1760 Datasheet | Specifications & PDF Download

Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB12

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1760 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A ·Comple

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Power Transistor (50V, 3A) 2SD1760 / 2SD1864 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB12

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Elektronische Bauelemente 2SD1760 3A , 60V NPN Epitaxial Planar Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-

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www.DataSheet4U.com ADVANCED ISD1700A Series Multi-Message Single-Chip Voice Record & Playback Devices w.D a taS hee t4U .co Confidential m Publ

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 BVCEO IC Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date :

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PRELIMINARY ISD1700 Series Multi-Message Single-Chip Voice Record & Playback Devices Publication Release Date: January 23, 2007 Revision 1.3-S2 ISD17

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SMD Type NPN Transistors 2SD1760 Transistors ■ Features ● Low VCE (sat) ● Complementary to 2SB1184 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1

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ISD1700 ISD ChipCorder® ISD1700 Series Datasheet The information described in this document is the exclusive intellectual property of Nuvoton Techno

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Power Transistor FEATURES  Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)  Complements the 2SB1184. APPLICATIONS  Epitaxial planar type.  NPN s

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Low Vcesat NPN Transistor TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter www.DataSheet4U.com TSD1760 PRODUCT SUMMARY BVCBO BVCEO IC

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www.DataSheet4U.com HD1760JL Very high voltage NPN power transistor for high definition and slim CRT display Features ■ ■ ■ State-of-the-art technol

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