2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-chann.
D2N60 - 2A 600V N-channel Enhancement Mode Power MOSFET
2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t.SVD2N60T - 600V N-Channel MOSFET
www.DataSheet.co.kr SVD2N60T 2A, 600V N-Channel MOSFET GENERAL DESCRIPTION 2 SVD2N60T is an N-channel enhancement mode power MOS field effect transi.AOD2N60A - 2A N-Channel MOSFET
AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description • Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss and Crss •.PTD2N60 - 600V N-Channel MOSFET
PTD2N60/PTU2N60 600V N-Channel MOSFET Features • 1.9A, 600V, RDS(on) = 4.70Ω @VGS = 10 V • Low gate charge ( typical 9nC) • High ruggedness • Fast swi.FQD2N60C - N-Channel MOSFET
MOSFET – N-Channel, QFET) 600 V, 1.9 A, 4,7 W FQD2N60C / FQU2N60C This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary.PHD2N60E - Transistor
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St.MDD2N60 - N-Channel MOSFET
MDD2N60 N-channel MOSFET 600V MDD2N60 N-Channel MOSFET 600V, 1.9A, 4.5Ω General Description These N-channel MOSFET are produced using advanced Magna.HFD2N60U - N-Channel MOSFET
HFD2N60U_HFU2N60U HFD2N60U / HFU2N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Ox.TSD2N60M - N-Channel MOSFET
TSD2N60M/TSU2N60M TSD2N60M/TSU2N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe .PFD2N60 - N-Channel MOSFET
Aug 2006 PFU2N60 / PFD2N60 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances .FQD2N60 - 600V N-Channel MOSFET
FQD2N60 / FQU2N60 April 2000 QFET FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tr.FQD2N60C - 600V N-Channel MOSFET
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET April 2013 FQD2N60C / FQU2N60C 600 V, 1.9 A, 4.7 Ω Features • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS .BRD2N60 - N-CHANNEL MOSFET
BRD2N60 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS 。N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,。 Low gate charge, .WFD2N60 - N-Channel MOSFET
Wisdom Semiconductor WFD/U2N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capabili.PHD2N60 - PowerMOS transistor
Philips Semiconductors Product specification PowerMOS transistor PHD2N60 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transis.AOD2N60 - 2A N-Channel MOSFET
AOD2N60/AOU2N60 600V, 2A N-Channel MOSFET General Description Product Summary The AOD2N60 & AOU2N60 have been fabricated using an advanced high vol.SVD2N60M - 600V N-CHANNEL MOSFET
SVD2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transist.SVD2N60F - 600V N-CHANNEL MOSFET
SVD2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transist.SVD2N60D - 600V N-CHANNEL MOSFET
SVD2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transist.SVD2N60DTR - 600V N-CHANNEL MOSFET
SVD2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transist.