D3N50 Datasheet | Specifications & PDF Download

AOD3N50 3A, 500V N-Channel MOSFET General Description The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed t

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TM

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AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET proces

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FDD3N50NZ — N-Channel UniFETTM II MOSFET FDD3N50NZ N-Channel UniFETTM II MOSFET 500 V, 2.5 A, 2.5 Ω Features • RDS(on) = 2.1 Ω (Typ.) @ VGS = 10 V, I

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isc N-Channel MOSFET Transistor AOD3N50 FEATURES ·Drain Current –ID= 2.8A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Re

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FQD3N50C/FQU3N50C 500V N-Channel MOSFET QFET FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features • 2.5 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V • Low gate

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AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET proces

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TM

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MDD3N50 N-channel MOSFET 500V Preliminary – Subject to change without notice MDD3N50 N-Channel MOSFET 500V, 2.8 A, 2.5Ω General Description The MDD3

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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www.vishay.com SiHD3N50D Vishay Siliconix D Series Power MOSFET DPAK (TO-252) D S G D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RD

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MDD3N50G N-channel MOSFET 500V MDD3N50G N-Channel MOSFET 500V, 2.8 A, 2.5Ω General Description The MDD3N50G uses advanced Magnachip’s MOSFET Technol

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