Features and Benefits • Glass Passivated Die Con.
Advanced Power Technology
APTGT600U170D4G - Single switch Trench + Field Stop IGBT Power Module
www.DataSheet4U.com APTGT600U170D4G Single switch Trench + Field Stop IGBT® Power Module 1 VCES = 1700V IC = 600A @ Tc = 80°C Application • Welding .
Diodes Incorporated
D4G - 1.0A GLASS PASSIVATED RECTIFIER
Features and Benefits • Glass Passivated Die Construction • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 30A Peak •.
ESMT
F59D4G81CA-45BG2L - 4 Gbit (512M x 8) 1.8V NAND Flash Memory
ESMT Flash FEATURES Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes Mo.
Elite Semiconductor
F59D4G161A - 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory
ESMT Flash FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit.
Microsemi
APTGT600U170D4G - Single switch Trench + Field Stop IGBT3 Power Module
APTGT600U170D4G Single switch Trench + Field Stop IGBT3 Power Module 1 3 5 2 VCES = 1700V IC = 600A @ Tc = 80°C Application Welding converters S.
Microsemi
APTGL475U120D4G - Single switch Trench + Field Stop IGBT4 Power Module
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Microsemi
APTGT600U120D4G - Single switch Trench + Field Stop IGBT3 Power Module
Single switch Trench + Field Stop IGBT3 Power Module 1 3 5 2 APTGT600U120D4G VCES = 1200V IC = 600A @ Tc = 80°C Application Welding converters Sw.
ESMT
M55D4G32128A-EEBG2R - 16M x 32 Bit x 8 Banks LPDDR3 SDRAM
ESMT LPDDR3 SDRAM Feature Ultra-low-voltage core and I/O power supplies VDD1 = 1.70–1.95V VDD2, VDDCA, VDDQ = 1.14–1.30V Organization 16M wo.
ESMT
M55D4G32128A-GFBG2R - 16M x 32 Bit x 8 Banks LPDDR3 SDRAM
ESMT LPDDR3 SDRAM Feature Ultra-low-voltage core and I/O power supplies VDD1 = 1.70–1.95V VDD2, VDDCA, VDDQ = 1.14–1.30V Organization 16M wo.
ESMT
M55D4G32128A-CDBG2R - 16M x 32 Bit x 8 Banks LPDDR3 SDRAM
ESMT LPDDR3 SDRAM Feature Ultra-low-voltage core and I/O power supplies VDD1 = 1.70–1.95V VDD2, VDDCA, VDDQ = 1.14–1.30V Organization 16M wo.
ESMT
F50D4G41XB - 1.8V 4-Gbit SPI-NAND Flash Memory
ESMT Flash F50D4G41XB (2X) Operation Temperature Condition -40°C~85°C 1.8V 4 Gbit SPI-NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7 V ~ 1.9.
ESMT
F59D4G81XB - 1.8V NAND Flash Memory
ESMT Flash FEATURES Voltage Supply: 1.8V (1.7 V ~ 1.95V) Open NAND Flash Interface (ONFI) 1.0-compliant Single-level cell (SLC) technology Org.
ESMT
F59D4G81KA - 4-Gbit 1.8V NAND Flash Memory
ESMT Flash FEATURES Voltage Supply VCC: 1.8V (1.7 V ~ 1.95V) Organization Page Size: (4K + 256) bytes Data Register: (4K + 256) bytes Bloc.
Toshiba
MG15D4GM1 - High Power Swutching Application / Motor Control Applications
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Fairchild Semiconductor
MSD4G13C - (MSD4x13C) Two Digit NUMERIC STICK DISPLAY
www.DataSheet4U.com 10.0mm (0.39 inch) Two Digit NUMERIC STICK DISPLAY AlInGaP Red (632nm) MSD4H13C Gap Green (Low Current) MSD4G13C GaN Blue (470nm).
Advanced Power Technology
APTGT300U170D4G - IGBT Power Module
APTGT300U170D4G Single switch Trench + Field Stop IGBT® www.datasheet4u.com Power Module VCES = 1700V IC = 300A @ Tc = 80°C Application • Welding conv.
Austin Semiconductor
AS3SSD4GB8PBG - Solid State Disk On Chip
AUSTIN SEMICONDUCTOR, INC. SOLID ST ATE DISK STA AS3SSD4GB8PBG AS3SSD8GB8PBG AS3SSD16GB5PBG PRELIMINARY Austin Semiconductor, Inc. Solid State Disk .