D4G Datasheet | Specifications & PDF Download

www.DataSheet4U.com 10.0mm (0.39 inch) Two Digit NUMERIC STICK DISPLAY AlInGaP Red (632nm) MSD4H13C Gap Green (Low Current) MSD4G13C GaN Blue (470nm)

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ESMT LPDDR3 SDRAM Feature  Ultra-low-voltage core and I/O power supplies ­ VDD1 = 1.70–1.95V ­ VDD2, VDDCA, VDDQ = 1.14–1.30V  Organization ­ 16M wo

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ESMT Flash F50D4G41XB (2X) Operation Temperature Condition -40°C~85°C 1.8V 4 Gbit SPI-NAND Flash Memory FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.9

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www.DataSheet4U.com APTGT600U170D4G Single switch Trench + Field Stop IGBT® Power Module 1 VCES = 1700V IC = 600A @ Tc = 80°C Application • Welding

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit

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ESMT LPDDR3 SDRAM Feature  Ultra-low-voltage core and I/O power supplies ­ VDD1 = 1.70–1.95V ­ VDD2, VDDCA, VDDQ = 1.14–1.30V  Organization ­ 16M wo

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Single switch Trench + Field Stop IGBT3 Power Module 1 3 5 2 APTGT750U60D4G VCES = 600V IC = 750A @ Tc = 80°C Application  Welding converters  Swit

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Single switch Trench + Field Stop IGBT4 Power Module 1 3 5 2 APTGL700U120D4G VCES = 1200V IC = 700A @ Tc = 80°C Application  Welding converters  Sw

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit

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ESMT LPDDR3 SDRAM Feature  Ultra-low-voltage core and I/O power supplies ­ VDD1 = 1.70–1.95V ­ VDD2, VDDCA, VDDQ = 1.14–1.30V  Organization ­ 16M wo

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ESMT Flash FEATURES  Voltage Supply ­ VCC: 1.8V (1.7 V ~ 1.95V)  Organization ­ Page Size: (4K + 256) bytes ­ Data Register: (4K + 256) bytes ­ Bloc

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APTGT400U170D4G Single switch Trench + Field Stop IGBT® Power Module www.DataSheet4U.net VCES = 1700V IC = 400A @ Tc = 80°C Application • Welding con

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Open NAND Flash Interface (ONFI) 1.0-compliant  Single-level cell (SLC) technology  Org

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ESMT Flash FEATURES  Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes  Mo

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Features and Benefits • Glass Passivated Die Construction • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 30A Peak •

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APTGT600U170D4G Single switch Trench + Field Stop IGBT3 Power Module 1 3 5 2 VCES = 1700V IC = 600A @ Tc = 80°C Application  Welding converters  S

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