D50N06 Datasheet | Specifications & PDF Download

CMD50N06/CMU50N06 N-Channel 60V MOSFET General Description The 50N06 combines advanced trench MOSFET technology with a low resistance package to pro

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50A 60V N-channel Enhancement Mode Power MOSFET D50N06 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, prov

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CED50N06/CEU50N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 36A , RDS(ON) = 18mΩ(typ) @VGS = 10V. Super high dense cell design

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isc N-Channel MOSFET Transistor FQD50N06 ·FEATURES ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)

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Isc N-Channel MOSFET Transistor PHD50N06LT ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1

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N-Channel Enhancement Mode Power MOSFET MXD50N06 DESCRIPTION The MXD50N06 combines advanced trench MOSFET technology with a low resistance package t

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • F

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CMD50N06B/CMU50N06B N-Channel 60V MOSFET General Description The 50N06B combines advanced trench MOSFET technology with a low resistance package to

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BRD50N06 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS 。N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features RDS(on)，，Crss ，。 Low

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FQD50N06 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.012 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 50 45 FEATURES • 17

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SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transi

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SPD50N06S2-14 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 14.4 50 P- TO252 -3-11 V mΩ A • Enhancement mode • 1

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SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transi

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OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating tem

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

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SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transi

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SUD50N06-16 New Product Vishay Siliconix www.DataSheet4U.com N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES D TrenchFETr Po

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N-Channel Trench Power MOSFET General Description The CSD50N06 combines advanced trench MOSFET technology with a low resistance package to provide ext

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SVD50N06T/D/M/MJ 50A、60V N SVD50N06T/D/M/MJ N MOS VDMOS 。 、。 ，。 ∗ 50A，60V，RDS(on)()=18mΩ@VGS=10V ∗ ∗ ∗ ∗ dv/dt 2 1 3 1. 2. 3. 1 3 T

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SPD50N06S2L-13 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 12.7 50 P- TO252 -3-11 V mΩ A • Enhancement mode •

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