D50N06 Datasheet | Specifications & PDF Download

50A 60V N-channel Enhancement Mode Power MOSFET D50N06 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, prov

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isc N-Channel MOSFET Transistor FQD50N06 ·FEATURES ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)

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FQD50N06 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.012 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 50 45 FEATURES • 17

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CMD50N06/CMU50N06 N-Channel 60V MOSFET General Description The 50N06 combines advanced trench MOSFET technology with a low resistance package to pro

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CMD50N06B/CMU50N06B N-Channel 60V MOSFET General Description The 50N06B combines advanced trench MOSFET technology with a low resistance package to

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SUD50N06-09L Vishay Siliconix N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.0093 at VGS = 10 V 0.0122 a

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Isc N-Channel MOSFET Transistor PHD50N06LT ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1

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N-Channel Trench Power MOSFET General Description The CSD50N06 combines advanced trench MOSFET technology with a low resistance package to provide ext

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SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transi

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N-Channel Enhancement Mode Power MOSFET MXD50N06 DESCRIPTION The MXD50N06 combines advanced trench MOSFET technology with a low resistance package t

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OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating tem

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OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Avalanche rated • dv/dt rated SPD50N06S2L-13 Product Summary VDS 55

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SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transi

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SPICE Device Model SUD50N06-08H Vishay Siliconix N-Channel 60-V (D-S) 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircui

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New Product SUD50N06-36 www.DataSheet4U.com Vishay Siliconix N-Channel 60-V (D-S), 150 °C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) 0.036 at V

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IPD50N06S3L-06 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C p

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

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SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transi

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SVD50N06T/D/M/MJ 50A、60V N SVD50N06T/D/M/MJ N MOS VDMOS 。 、。 ，。 ∗ 50A，60V，RDS(on)()=18mΩ@VGS=10V ∗ ∗ ∗ ∗ dv/dt 2 1 3 1. 2. 3. 1 3 T

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