D50N06 Datasheet | Specifications & PDF Download

CED50N06/CEU50N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 36A , RDS(ON) = 18mΩ(typ) @VGS = 10V. Super high dense cell design

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50A 60V N-channel Enhancement Mode Power MOSFET D50N06 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, prov

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isc N-Channel MOSFET Transistor FQD50N06 ·FEATURES ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max)

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CMD50N06/CMU50N06 N-Channel 60V MOSFET General Description The 50N06 combines advanced trench MOSFET technology with a low resistance package to pro

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SUD50N06-16 New Product Vishay Siliconix www.DataSheet4U.com N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES D TrenchFETr Po

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr

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FQD50N06 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.012 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 50 45 FEATURES • 17

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BRD50N06 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS 。N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features RDS(on)，，Crss ，。 Low

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HD50N06_HU50N06 Nov 2009 HD50N06 / HU50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 22 mΩ ID = 50 A FEATURES  Originative New Design  Superio

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IPD50N06S3L-06 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C p

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IPD50N06S3L-08 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C p

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OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C o

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OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating tem

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OptiMOS®-T Power-Transistor Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 17

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OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175

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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

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SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transi

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SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transi

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SUD50N06-12 New Product Vishay Siliconix www.DataSheet4U.com N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A)c 63 rDS

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