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DMTH6016LPSW 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) 16mΩ @ VGS = 10V 24mΩ @ VGS = 4.5V ID TC

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DMTH8008SPSW Green 80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 80V RDS(ON) 7.8mΩ @ VGS = 10V ID TC = +25°C 92

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DMTH6016LPDW 60V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 19mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V ID Max TC

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DMT8012LPSW Green 80V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 80V RDS(ON) 17mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V ID TC =

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DMTH41M3SPSWQ Green 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 40V RDS(ON) Max 1.38mΩ @ VGS = 10V ID TC = +2

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DMTH6004LPSW Green 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) Max 3.1mΩ @VGS = 10V 4.5mΩ @VGS = 4

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DMTH6006SPSW Green 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 60V RDS(ON) MAX 6.2mΩ @ VGS = 10V ID MAX TC =

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AADDVVNAAENNCWCEEPD IRNINOENFDFWOUORPCRRTMMOAADTTIIUOCONTN Product Summary Device BVDSS Q1 & Q2 30V RDS(ON) Max 12mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V

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DMTH41M3LPSW Green 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 40V RDS(ON) 1.38mΩ @ VGS = 10V 2.3mΩ @ VGS = 4.

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DMTH8004LPS Green 80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 80V RDS(ON) 3.8mΩ @ VGS = 10V 5.3mΩ @ VGS = 4.5V

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FEATURES  True power-on multiturn counter  46-turn magnetic sensor  >16k° digital output  ±0.25° accuracy  Measurement update rate 100 kSPS  16

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FDMT800150DC N-Channel Dual CoolTM 88 Power Trench® MOSFET July 2015 FDMT800150DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 150 V, 99 A, 6.5 mΩ

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DMTH10H032LFVW 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 100V RDS(ON) MAX 30mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V

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DMTH45M5SPDW Green 40V +175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features BVDSS 40V RDS(ON) Max 5.5mΩ @ VGS = 10

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isc N-Channel MOSFET Transistor DMT6004SCT FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On

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DMTH8008SFGQ Green 80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BVDSS 80V RDS(ON) Max 7mΩ @ VGS = 10V 10.5mΩ

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DMTH8008LFGQ 80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 80V RDS(ON) Max 6.9mΩ @ VGS = 10V 10.4mΩ @ VGS = 4.5V ID Max TC =

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