ETR Datasheet | Pinout, Features, Price Comparison & PDF

M54HC4538 M74HC4538 DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR . . . . . . . . HIGH SPEED tPD = 25 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION STA

KT88 max 52,0 max 110,0 max 125,0 Base: OCTAL Uf = 6,3 V If = 1,6 A Typical Characteristics: Ua = 250 U = 250 g2 I = 140 a I = max. 7 g2 Ug1

FRANK ELECTRONIC & PLASTIC CO.,LTD. 2M218 SERIES 1. ELECTRICAL CHARCTERISTICS Peak anode voltage (ebm) Average anode current (Ib) Average output powe

Svetlana EL509 / EL519 / 6KG6 High Performance Beam Power Tetrode The Svetlana EL509 is a beam power tetrode intended for use in class A, AB or B audi

Russian 6P3S, 6P3S-E = 6n3C, 6n3C-E General Tetrode, used in output stages of low frequency amplifiers. Envelope: glass, with octal base. Mass 70 g. L

AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca

AOE6936 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab

6P3SZ, 6P3SZ-E (6n3C, 6n3C-E) General: Tetrode, used in output stages of low frequency amplifiers. Envelope: glass, with octal base. Mass: 70 g. Gene

BF961 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling.

Automotive Electronics Barometric pressure sensor for engine management systems SMD288 Overview The SMD288 belongs to a family of various micro-machi

BF964S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling

SN74LS122, SN74LS123 Retriggerable Monostable Multivibrators These dc triggered multivibrators feature pulse width control by three methods. The basi

XXXXXX www.DataSheet4U.com AC2001 Millimeter Wave gunn Oscillator Module DS5074-3.0 January 2000 Replaces March 1999, version DS5074-2.0 Features l

InterFET Product Folder Technical Support Order Now N0016H N0016H Process Geometry Features • Low Input Capacitance: 3.5pF Typical • Low Gate Le

3503 The UGN3503LT, UGN3503U, and UGN3503UA Hall-effect sensors accurately track extremely small changes in magnetic flux density—changes generally to

Date:- 28 September, 2012 Data Sheet Issue:- 2 Fast Symmetrical Gate Turn-Off Thyristor Type H0700KC14# to H0700KC17# Absolute Maximum Ratings VDRM

AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • Hig

www.ti.com SBAS640B – JANUARY 2018 – REVISED DDAPRRRVVIL552000552551 SBAS640B – JANUARY 2018 – REVISED APRIL 2021 DRV5055 Ratiometric Linear Hall Eff

QA3111N6N 30V Asymmetric Dual N-Channel Power MOSFET General Description The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET

Date:- 28 September, 2012 Data Sheet Issue:- 2 Fast Symmetrical Gate Turn-Off Thyristor Type H0700KC14# to H0700KC17# Absolute Maximum Ratings VDRM