.
ETC
EL519 - High Performance Beam Power Tetrode
Svetlana EL509 / EL519 / 6KG6 High Performance Beam Power Tetrode The Svetlana EL509 is a beam power tetrode intended for use in class A, AB or B audi.
FRANK ELECTRONIC
2M218 - Magnetron
FRANK ELECTRONIC & PLASTIC CO.,LTD. 2M218 SERIES 1. ELECTRICAL CHARCTERISTICS Peak anode voltage (ebm) Average anode current (Ib) Average output powe.
NATIONAL
2M226-29F - Continuous Wave Magnetron
Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet htt.
Alpha & Omega Semiconductors
AOE6936 - 30V Dual Asymmetric N-Channel MOSFET
AOE6936 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab.
ETC
6P3S - Tetrode
Russian 6P3S, 6P3S-E = 6n3C, 6n3C-E General Tetrode, used in output stages of low frequency amplifiers. Envelope: glass, with octal base. Mass 70 g. L.
Alpha & Omega Semiconductors
AOE6930 - 30V Dual Asymmetric N-Channel FET
AOE6930 30V Dual Asymmetric N-Channel XSPairFET TM General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current.
LG
2M214-21GKH - Continuous Wave Magnetron
LG FOR MESSRS : Uniservice Co Ltd CUSTOMER’ S ACCEPTANCE SPECIFICATIONS MAGNETRON : 2M214 – 21GKH CONTENTS DATE : FEB. 01, 2008 COVER ------------.
ETC
6P3S-E - Tetrode
Russian 6P3S, 6P3S-E = 6n3C, 6n3C-E General Tetrode, used in output stages of low frequency amplifiers. Envelope: glass, with octal base. Mass 70 g. L.
Alpha & Omega Semiconductors
AON6982 - 30V Dual Asymmetric N-Channel MOSFET
AON6982 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capabi.
ETC
2M226 - MAGNETRON LG
ТЕХНИЧЕСКАЯ ИНФОРМАЦИЯ МАГНЕТРОН LG 2M226 Электрические характеристики Параметр Напряжение накала Ток накала Частота (на согласованной нагрузке) Потен.
Hynix
H27UCG8T2ETR-BC - NAND Flash
64Gb Based NAND Flash 64Gb and 128Gb NAND Flash Specification Rev 1.0 /Aug. 2013 1 Document Title Revision History Revision No. 1.0 - Release Hyni.
Siemens
BF963 - Silicon N-Channel MOSFET Tetrode
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DAEWOO
2M218 - Magnetron
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Alpha & Omega Semiconductors
AON6992 - 30V Dual Asymmetric N-Channel MOSFET
AON6992 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capabi.
Alpha & Omega Semiconductors
AON6996 - 30V Dual Asymmetric N-Channel MOSFET
AON6996 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capabi.
Alpha & Omega Semiconductors
AONY36354 - Dual Asymmetric N-Channel MOSFET
AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca.
Alpha & Omega Semiconductors
AO4932 - Asymmetric Dual N-Channel MOSFET
AO4932 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4932 uses advanced trench technology to provide excellen.
Bosch
SMD288 - Barometric pressure sensor
Automotive Electronics Barometric pressure sensor for engine management systems SMD288 Overview The SMD288 belongs to a family of various micro-machi.
Alpha & Omega Semiconductors
AONY36352 - 30V Dual Asymmetric N-Channel MOSFET
AONY36352 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca.
Alpha & Omega Semiconductors
AON6978 - 30V Dual Asymmetric N-Channel MOSFET
AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (S.
