Elite Semiconductor Datasheet | Specifications & PDF Download

ESMT Features z Single supply voltage 8 ~ 26V for loudspeaker driver Built-in LDO output 3.3V for others z Loudspeaker power from 24V supply BTL Mode:

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ESMT Flash  FEATURES  Single supply voltage 2.7~3.6V  Standard, Dual and Quad SPI  Speed - Read max frequency: 33MHz - Fast Read max frequency: 50

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ESMT AD82587 2x15W Stereo / 1x30W Mono Digital Audio Amplifier Features  I2C control interface  16/18/20/24-bit input with I2S, Left-alignment

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ESMT/EMP Features Preliminary AD82587D 2X20W Stereo / 1X40W Mono Digital Audio Amplifier z Anti-pop design z 16/18/20/24-bit input with I2S, Left-a

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m o .c U SGRAM 4 t e e h S a FEATURES at 3.3V power supply y JEDEC standard y LVTTL .D compatible with multiplexed address w bank / Pulse RAS y Dual y

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www.DataSheet4U.com EliteMT DRAM M11L416256SA 256 K x 16 DRAM EDO PAGE MODE FEATURES X16 organization EDO (Extended Data-Output) access mode 2 CAS

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ESMT Features z 16/18/20/24-bit input with I S data format z PSNR & DR (A-weighting) Loudspeaker: 98dB (PSNR), 102dB (DR) Headphone: 87dB (PSNR), 96dB

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www.DataSheet4U.com ESMT F25L004A 4Mbit (512Kx8) 3V Only Serial Flash Memory „ FEATURES Single supply voltage 2.7~3.6V Speed - Read max frequency

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www.DataSheet4U.com ESMT F25L008A 8Mbit (1Mx8) 3V Only Serial Flash Memory „ FEATURES Single supply voltage 2.7~3.6V Speed - Read max frequency :

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ESMT „ FEATURES y Single supply voltage 2.7~3.6V y Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz;100MHz y Low power consumption

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ESMT M13S128168A (2S) DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per cloc

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www.DataSheet4U.com ESMT Revision History Revision 0.1 (28 Apr. 2006) - Original M13S2561616A Revision 1.0 (07 Jun. 2006) - Delete Preliminary at e

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www.DataSheet4U.com ESMT DDR SDRAM Features z z z z z z z z z z z z z z z z z z z M13S32321A 256K x 32 Bit x 4 Banks Double Data Rate SDRAM JEDEC S

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ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original www.DataSheet4U.com M24L16161DA Elite Semiconductor Memory Technology Inc. Publicat

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ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — T

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ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 2 mA @ f

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ESMT EML3022 Dual Channel 1A, Synchronous Step-Down Regulator General Description EML3022 is designed with high efficiency step down DC/DC converte

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ESMT EML3230 3A, 23V, 340KHz Synchronous Step-Down Converter General Description The EML3230 is a synchronous step-down DC/DC converter that provid

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ESMT/EMP EMC5755 Standalone 1.2A Linear Li-Ion Battery Charger with Thermal Regulation in TDFN-6 General Description The EMC5755 is a complete linea

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ESMT/EMP EMC5060 Single-cell Li-Ion Charger IC with System Power Management General Description The EMC5060 is a single-cell Li-ion charger IC with

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