Eudyna Datasheet | Specifications & PDF Download

( DataSheet : www.DataSheet4U.com ) FMM5117X 20-32GHz Downconverter MMIC FEATURES • • • • Integrated Monolithic Downconverter High Linearity Single

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www.DataSheet4U.com EMM5834X Ku / K-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 26 dBm (Typ.) •High Gain; G1dB = 23 dB(Typ.) •Wide Frequ

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www.DataSheet4U.com 1,310nm DFB CATV Laser FEATURES • • • • • Direct Modulation DFB Laser Built-in TEC, Thermistor and Monitor PD Optical Isolator 14

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FMM5054VF Ku Band Power Amplifier MMIC FEATURES ・High Output Power: 32.5dBm(typ.) ・High Linear Gain: 31.0dB(typ.) ・Low Input VSWR ・Impedance Matched Z

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FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 5.5dB (Typ.) High PAE:

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w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 44.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd =

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www.DataSheet4U.com 1,310nm DFB CATV Laser FEATURES • • • • • Direct Modulation DFB Laser Built-in TEC, Thermistor and Monitor PD Optical Isolator 14

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FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.)

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InGaAs-PIN/Preamp Receiver FEATURES • Small Form Factor Package(GW): 9 pins coplanar • Integrated Design Optimizes Performance at Bit Rates up to 10.7

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InGaAs-APD/Preamp Receiver FEATURES • Data Rates up to 2.7Gb/s • High Sensitivity: -34 dBm (typ.) • Differential Electrical Output • Preamplifier Powe

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InGaAs-APD/Preamp Receiver FEATURES • • • • • Data rate up to 622Mb/s High Responsibility: typ. 0.85A/W at 1,550nm 30µm active area APD chip with GaAs

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FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 44% (Typ.) Broad Fre

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FLM1314-18F Ku-Band Internally Matched FET FEATURES •High Output Power: P1dB=42.5dBm(Typ.) •High Gain: G1dB=6.0dB(Typ.) •High PAE: ηadd=27%(Typ.) •Bro

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FLC257MH-8 C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 34.0dBm(Typ.) • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 35%(Typ.) • Pro

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FEATURES • High Output Power: P1dB=35.5dBm (Typ.) • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package •

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PIN Photodiode FEATURES • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm

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FMM5051VU Ku band Power Amplifier MMIC FEATURES ・High Output Power: 31.5dBm(typ.) ・High Linear Gain: 31.5dB(typ.) ・Low Input VSWR ・Broad Band: 13.75~1

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FLK207MH-14 X, Ku Band Power GaAs FET FEATURES •www.DataSheet4U.com High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE

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FLK207XV GaAs FET & HEMT Chips FEATURES •www.DataSheet4U.com High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: ηadd

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1,550nm DWDM Direct Modulation DFB Laser www.DataSheet4U.com FLD5F15CX-A FEATURES • Direct Modulated DFB Laser for WDM systems • Optimized for Long

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