F634 Datasheet | Specifications & PDF Download

CY95630H Series New 8FX 8-bit Microcontrollers The CY95630H Series is a series of general-purpose, single-chip microcontrollers. In addition to a com

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CY95630H Series New 8FX 8-bit Microcontrollers The CY95630H Series is a series of general-purpose, single-chip microcontrollers. In addition to a com

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CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEPF634 CEBF634 CEIF634 CEFF634 VDSS 250V 250V 250V 2

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Freescale Semiconductor Advanced Information Document Number: MM912F634 Rev. 5.0, 11/2010 Integrated S12 Based Relay Driver with LIN The MM912F634 i

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www.vishay.com IRF634S, SiHF634S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Q

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IRF634B/IRFS634B November 2001 IRF634B/IRFS634B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi

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® BUF 634 BUF634 BUF 634 BUF 634 BUF6 34 250mA HIGH-SPEED BUFFER FEATURES q HIGH OUTPUT CURRENT: 250mA q SLEW RATE: 2000V/µs q PIN-SELECTED BANDWID

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CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEPF634 CEBF634 CEIF634 CEFF634 VDSS 250V 250V 250V 2

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IRF634 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,。 Low gate charge, l

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CEDF634/CEUF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES 250V, 6.7A, RDS(ON) = 450mΩ @VGS = 10V. Super high dense cell design for e

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$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende

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CEDF634/CEUF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES 250V, 6.7A, RDS(ON) = 450mΩ @VGS = 10V. Super high dense cell design for e

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IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω) VGS = 10 V Qg

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BUF634A SBOS948F – FEBRUARY 2019 – REVISED MAY 2021 BUF634A 36-V, 210-MHz, 250-mA Output, High-Speed Buffer 1 Features • Pin-Selected Bandwidth: 35 M

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BUF634 SBOS030C – AUGUST 2000 – REVISED MARCH 2024 BUF634 250mA High-Speed Buffer 1 Features • A newer version of this device is now available: BUF63

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CEFF634 Nov. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 250V , 6A , RDS(ON)=450mΩ @VGS=10V. D 6 Super high dens

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PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Parallel

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CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEPF634 CEBF634 CEIF634 CEFF634 VDSS 250V 250V 250V 2

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IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω) VGS = 10 V Qg

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DMF63403F Specifications and Applications Information 12/16/08 Preliminary Six Lamp DC to AC Inverter Package Configuration 2.83[71,8] MAX 2.146 [54,

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