F7N65 Datasheet | Specifications & PDF Download

MDF7N65B N-channel MOSFET 650V MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35Ω General Description These N-channel MOSFET are produced using advanced Ma

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SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which

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AOT7N65/AOTF7N65 650V, 7A N-Channel MOSFET General Description Product Summary The AOT7N65 & AOTF7N65 have been fabricated using an advanced high v

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FQP7N65/FQPF7N65 650V, 7A N-Channel MOSFET General Description Product Summary The FQP7N65 & FQPF7N65 have been fabricated using an advanced high v

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7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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Silan Microelectronics SVF7N65CF/D/MJ/K/S/FQ/T _Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65CF/D/MJ/K/S/FQ/T is an N-channel enh

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MFIRF7N65 MCIRF7N65 ID = 7.0A VDS = 650V RDS(on)MAX = 1.5Ω Major Ratings and Characteristics Characteristics Values Units ID 7.0 A IDM 28.0 A VD

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Wisdom Semiconductor WFF7N65 N-Channel MOSFET Features ■ RDS(on) (Max 1.4 Ω )@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved dv/dt Capability, Hig

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Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF7N65JA ●： RoHS ●FEATURES：■LOW THERMAL RESISTANCE

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PFP7N65E / PFF7N65E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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KF7N65F-VB KF7N65F-VB Datasheet /$IBOOFM
7
%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC

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SEMICONDUCTOR TECHNICAL DATA KF7N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristi

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Silan Microelectronics SVF7N65CF/D/MJ/K/S/FQ/T _Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65CF/D/MJ/K/S/FQ/T is an N-channel enh

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SLP7N65C / SLF7N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. T

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SEMICONDUCTOR TECHNICAL DATA KF7N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristi

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WFF7N65S 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS tested � RoHS compl iant Gene

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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Main Product Characteristics: VDSS RDS(on) 650V 1.26Ω (typ.) ID 7A Features and Benefits: TO220F  Advanced Process Technology  Special designe

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AOT7N65/AOTF7N65 650V, 7A N-Channel MOSFET General Description Product Summary The AOT7N65 & AOTF7N65 have been fabricated using an advanced high v

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