CAPACITORS March 2018 MLCC with dipped radial lea.
Panasonic
ELJFA181xF - Fixed Inductors
Fixed Inductors (Chip Inductors) 3. General use FC, FA, FB Japan China ■ Features General use wire wound and resin molded chip inductor. Corespond to.
INCHANGE
IXFA18N60X - N-Channel MOSFET
isc N-Channel MOSFET Transistor IXFA18N60X ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 230mΩ@VGS=10V ·Fully characterized avalanche volt.
IXYS
IXFA18N60X - Power MOSFET
X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA18N60X IXFP18N60X IXFH18N60X VDSS = ID25 = RDS(on) 600V 18A 230m N-Channe.
Infineon Technologies
PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET
PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA180701E and PTFA180.
Infineon Technologies
PTFA181001E - Thermally-Enhanced High Power RF LDMOS FET
PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA181001E and PTFA18.
Infineon Technologies
PTFA181001F - Thermally-Enhanced High Power RF LDMOS FET
PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA181001E and PTFA18.
Infineon Technologies
PTFA181001HL - Thermally-Enhanced High Power RF LDMOS FET
Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz .
TDK
FA18 - CAPACITORS
CAPACITORS March 2018 MLCC with dipped radial lead (Halogen-free, automotive grade, high temperature application) FA series (NP0, X8R) Type: Lead p.
IXYS
IXFA18N65X2 - Power MOSFET
X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA18N65X2 IXFP18N65X2 IXFH18N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM .
IXYS Corporation
IXFA180N10T2 - Power MOSFET
TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA180N10T2 IXFP180N10T2 Symbol VDSS VDGR VG.
Infineon Technologies
PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET
PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA180701E and PTFA180.
Infineon Technologies
PTFA181001GL - Thermally-Enhanced High Power RF LDMOS FET
Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz .
Infineon Technologies
PTFA182001E - Thermally-Enhanced High Power RF LDMOS FET
PTFA182001E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 – 1880 MHz www.DataSheet4U.net Descri.
Panasonic
ELJFA180xF - Fixed Inductors
Fixed Inductors (Chip Inductors) 3. General use FC, FA, FB Japan China ■ Features General use wire wound and resin molded chip inductor. Corespond to.
Vishay
VS-HFA180NH40PbF - Ultrafast Soft Recovery Diode
www.vishay.com VS-HFA180NH40PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 180 A HALF-PAK (D-67) Lug terminal anode Base cathod.
INCHANGE
IXFA180N10T2 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFA180N10T2 ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input .
