FA18 Datasheet | Specifications & PDF Download

Fixed Inductors (Chip Inductors) 3. General use FC, FA, FB Japan China ■ Features General use wire wound and resin molded chip inductor. Corespond to

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CAPACITORS March 2018 MLCC with dipped radial lead (Halogen-free, automotive grade, high temperature application) FA series (NP0, X8R) Type: Lead p

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X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA18N65X2 IXFP18N65X2 IXFH18N65X2 Symbol VDSS VDGR VGSS VGSM ID25 IDM

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PTFA182001E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 – 1880 MHz www.DataSheet4U.net Descri

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isc N-Channel MOSFET Transistor IXFA18N60X ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 230mΩ@VGS=10V ·Fully characterized avalanche volt

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PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA181001E and PTFA18

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X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA18N60X IXFP18N60X IXFH18N60X VDSS = ID25 = RDS(on) 600V 18A 230m N-Channe

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PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA180701E and PTFA180

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PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA181001E and PTFA18

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Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz

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Fixed Inductors (Chip Inductors) 3. General use FC, FA, FB Japan China ■ Features General use wire wound and resin molded chip inductor. Corespond to

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www.vishay.com VS-HFA180NH40PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 180 A HALF-PAK (D-67) Lug terminal anode Base cathod

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Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFA180N10T2 ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input

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TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA180N10T2 IXFP180N10T2 Symbol VDSS VDGR VG

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PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA180701E and PTFA180

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