.
Infineon
161
70S360P7 - MOSFET
IPA70R360P7S MOSFET 700VCoolMOSªP7PowerDevice CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesu.
Infineon Technologies Corporation
136
06N03LA - Power Transistor
OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) prod.
Infineon Technologies
115
K75T60 - IGBT
IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr.
Infineon Technologies
115
K50H603 - IGBT
IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode IKW50N60H3 600Vhighspeedswitchingser.
Infineon
107
H20R1203 - Reverse conducting IGBT
ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW20N120R3 Datasheet IndustrialPowerControl IHW20N120R3 ResonantSw.
Infineon Technologies
96
K25H1203 - IGBT
! ' $ ( ## # ! " # # $ %&% + !)* + ,!- !. # $ %% /' $# 0+* /# *. /0 $ %&% ' $ ( ## # / 1 21 1 3 1 4 5+ /6 #% 7* *+ % # / 8(% # # 9) , 1 # / 1 # .
Infineon
86
K30H603 - IGBT
IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode IKW30N60H3 600Vhighspeedswitchingse.
Infineon
85
70S600P7 - MOSFET
IPD70R600P7S MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtoth.
Infineon
80
K50T60 - IGBT
IKW50N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr.
Infineon
75
4N04R8 - Power-Transistor
IPLU300N04S4-R8 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating.
Infineon
73
6R190E6 - E6 Power Transistor
0**L ;]]ZDEIk =0 F]eS` J`O\aWab]` AFM0*H+3*=0& AFF0*H+3*=0& AF80*H+3*=0 ) 8TaR`X_bX^] ;]]ZDEIk Wa O `Sd]ZcbW]\O`g bSQV\]Z]Ug T]` VWUV d]ZbOUS ^]eS` .
Infineon Technologies AG
72
BFS17P - NPN Silicon RF Transistor
BFS17P NPN Silicon RF Transistor Features • Maximum collector-emitter voltage VCE0 = 15 V • Maximum collector current IC = 25 mA • Noise figure NF = 3.
Infineon Technologies
68
H20R1202 - Reverse Conducting IGBT
IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode .
Infineon Technologies
66
2QR2280Z - ICE2QR2280Z
Datasheet,Version 2.1, August 30, 2011 ® Never stop thinking. CoolSET® - Q1 ICE2QR2280Z Revision History: August 30, 2011 Previous Version: Page .
Infineon
64
6R125P - Power Transistor
CoolMOSTM Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qua.
Infineon Technologies
58
K75EEH5 - High speed 5 IGBT
IGBT Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKZ75N65EH5 650VDuoPackIGBTanddiode Hig.
Infineon
57
6R199P - Power Transistor
CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qual.
FINE MAD ELECTRONICS
56
FM6124 - 16-channel dual-buffer constant current output LED driver
SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD. FM6124 (：S&CIC1501) 16 LED FM6124 LED IC， 16 。FM6124 “ ”，，。FM6124 ， 。 FM6124 ， PCB 。 ， LED 。.
Infineon
56
70S900P7 - MOSFET
IPD70R900P7S MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtoth.
Infineon
56
045N10N - MOSFET
IPA045N10N3G MOSFET OptiMOSTM3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylow.