FP260 Datasheet | Specifications & PDF Download

PD - 95010A IRFP260NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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IRFP260NPbF V(BR)DSS RDS(on) max. ID 200V 0.04 50A Features • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • F

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IRFP260NPbF V(BR)DSS RDS(on) max. ID 200V 0.04 50A Features • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • F

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260N，IIRFP260N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mo

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PD - 95010A IRFP260NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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www.vishay.com IRFP260 Vishay Siliconix Power MOSFET D TO-247AC G S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 VGS = 10 V

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260M，IIRFP260M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mo

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·Ease of paralleling ·High speed switching ·Hard switched and high frequency circuits

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Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralle

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www.DataSheet4U.com Standard Power MOSFET N-Channel Enhancement Mode IRFP 260 VDSS ID (cont) RDS(on) = 200 V = 46 A = 55 mΩ Symbol VDSS VDGR VGS V

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PD - 96293 IRFP260MPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l F

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Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralle

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AUTOMOTIVE GRADE Features l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche All

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AUTOMOTIVE GRADE   Features • Advanced Process Technology • Low On-Resistance • 175°C Operating Temperature • Fast Switching • Repetitive Avalanche A

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iscN-Channel MOSFET Transistor IRFP260 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =

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PD- 95915 IRFP260PbF • Lead-Free www.DataSheet4U.com www.irf.com 1 9/27/04 IRFP260PbF www.DataSheet4U.com 2 www.irf.com IRFP260PbF www.Dat

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FP260-VB FP260-VB Datasheet Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VG

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