FQA Datasheet | Specifications & PDF Download

www.DataSheet4U.com FQA5N90 September 2000 QFET FQA5N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effe

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FQA10N80C-F109 — N-Channel QFET® MOSFET FQA10N80C-F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features • 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS

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FQA19N20C FQA19N20C 200V N-Channel MOSFET QFET ® General Description These N-Channel enhancement mode power field effect transistors are produced u

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FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ April 2013 Features • 11.4 A,

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FQA12N60 April 2000 QFET FQA12N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod

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FQA28N50 — N-Channel QFET® MOSFET FQA28N50 N-Channel QFET® MOSFET 500 V, 28.4 A, 160 mΩ Features • 28.4 A, 500 V, RDS(on) = 160 mΩ (Max.) @ VGS = 10

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FQA65N20 August 2001 QFET FQA65N20 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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FQAF70N08 August 2000 QFET FQAF70N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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FQA8N80C 800V N-Channel MOSFET September 2006 QFET FQA8N80C 800V N-Channel MOSFET Features • • • • • • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V Low g

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FQA55N10 August 2000 QFET FQA55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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FQA6N90C_F109 900V N-Channel MOSFET FQA6N90C_F109 900V N-Channel MOSFET Features • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V • Low gate charge ( typical 3

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MIL-COTS 20A, 40Vdc Passive EMC Filters FQA Series www.us.tdk-lambda.com/lp/products/fqa-series www.emea.tdk-lambda.com/fqa The FQA filter modules ha

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DATA SHEET www.onsemi.com MOSFET – N-Channel QFET 900 V, 11.4 A, 960 mW FQA11N90-F109 Description This N−Channel Enhancement Mode Power MOSFET is pr

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isc N-Channel MOSFET Transistor FQA11N90 FEATURES ·Drain Current : ID= 11.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On

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FQA10N80 September 2000 QFET FQA10N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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FQA12P20 May 2000 QFET FQA12P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produc

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FQA13N80 800V N-Channel MOSFET FQA13N80 800V N-Channel MOSFET Features • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate charge ( typical 68 nC)

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