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No	Part Number	Description	Manufacture	PDF
142	FQA10N80	800V N-Channel MOSFET FQA10N80 September 2000 QFET FQA10N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar s	Fairchild Semiconductor
141	FQA10N80C	800V N-Channel MOSFET FQA10N80C 800V N-Channel MOSFET September 2006 QFET FQA10N80C 800V N-Channel MOSFET Features • • • • • • 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss	Fairchild Semiconductor
140	FQA10N80C_F109	N-Channel QFET MOSFET FQA10N80C_F109 — N-Channel QFET® MOSFET FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features • 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ	Fairchild Semiconductor
139	FQA11N40	400V N-Channel MOSFET QFET $ $ $ $ $ $ %% &'())+,) (&Ω-,%)* . / 01 2 ./ 0)2 %))3 ! 4	Fairchild Semiconductor
138	FQA11N90	900V N-Channel MOSFET FQA11N90 September 2000 QFET FQA11N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar s	Fairchild Semiconductor
137	FQA11N90C	900V N-Channel MOSFET FQA11N90C 900V N-Channel MOSFET September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss	Fairchild Semiconductor
136	FQA11N90C_F109	MOSFET FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A • Low Gate Charge	Fairchild Semiconductor
135	FQA11N90_F109	N-Channel QFET MOSFET FQA11N90_F109 — N-Channel QFET® MOSFET FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ Features • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A • Low Gate Charg	Fairchild Semiconductor
134	FQA12N60	600V N-Channel MOSFET FQA12N60 April 2000 QFET FQA12N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar strip	Fairchild Semiconductor
133	FQA12P20	200V P-Channel MOSFET FQA12P20 May 2000 QFET FQA12P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,	Fairchild Semiconductor
132	FQA13N50	500V N-Channel MOSFET QFET $ $ $ $ $ $ %& '()*+,- '&Ω.+-%+ / 0 ') 1 /0 2)1 %*3 ! 4	Fairchild Semiconductor
131	FQA13N50C	500V N-Channel MOSFET FQA13N50C QFET FQA13N50C 500V N-Channel MOSFET General Description These N-Channel enhancem ent m ode power f ield ef fect transistors ar e prod uced using F airchild’s proprietary, planar stripe,	Fairchild Semiconductor

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