FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ Features • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V,

FQA55N10 August 2000 QFET FQA55N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

FQA24N60 — N-Channel QFET® MOSFET FQA24N60 N-Channel QFET® MOSFET 600 V, 23.5 A, 240 mΩ June 2014 Description This N-Channel enhancement mode power

FQA28N15 — N-Channel QFET® MOSFET FQA28N15 N-Channel QFET® MOSFET 150 V, 33 A, 90 mΩ June 2014 Description Features This N-Channel enhancement mo

FQA13N80 800V N-Channel MOSFET September 2006 QFET FQA13N80 800V N-Channel MOSFET Features • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate cha

FQA19N20C FQA19N20C 200V N-Channel MOSFET QFET ® General Description These N-Channel enhancement mode power field effect transistors are produced u

FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V

DATA SHEET www.onsemi.com MOSFET – N-Channel QFET 900 V, 11.4 A, 960 mW FQA11N90-F109 Description This N−Channel Enhancement Mode Power MOSFET is pr

isc N-Channel MOSFET Transistor FQA11N90 FEATURES ·Drain Current : ID= 11.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On

FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ April 2013 Features • 11.4 A,

FQA13N50CF — N-Channel QFET® FRFET® MOSFET FQA13N50CF May 2014 N-Channel QFET® FRFET® MOSFET 500 V, 15 A, 480 mΩ Features Description • 15 A, 5

 
 
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FQA24N50F September 2001 FRFET FQA24N50F 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors a

FQA13N80_F109 — N-Channel QFET® MOSFET FQA13N80_F109 N-Channel QFET® MOSFET 800 V, 12.6 A, 750 mΩ April 2014 Description This N-Channel enhancement

FQA40N25 — N-Channel QFET® MOSFET April 2014 FQA40N25 N-Channel QFET® MOSFET 250 V, 40 A, 70 mΩ Description This N-Channel enhancement mode power MO

FQA34N25 October 2001 FQA34N25 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produce

FQA9N90C QFET FQA9N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using F

isc N-Channel MOSFET Transistor FQA90N08 FEATURES ·Drain Current : ID= 90A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Re

MOSFET – N-Channel, QFET 600 V, 23.5 A, 240 mW FQA24N60 Description This N−Channel Enhancement Mode power MOSFET is produced using onsemi’s proprieta

 
 
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