FT120 Datasheet | Specifications & PDF Download

Advanced Technical Information PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH 120N15P IXFT 120N15P VDS

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FT12 H LOGIC LEVEL TRIAC TO220-AB On-State Current 12 Amp Gate Trigger Current < 10 mA Off-State Voltage 200 V ÷ 600 V MT2 MT1 MT2 G This serie

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FT12 W LOGIC LEVEL TRIAC TO220-F (FULLY ISOLATED CASE) On-State Current 12 Amp Gate Trigger Current < 10 mA Off-State Voltage 200 V ÷ 800 V MT1 MT

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Document No.: FT_000646 FT120 USB DEVICE CONTROLLER WITH PARALLEL BUS IC Datasheet Version 1.2 Clearance No.: FTDI# 291 Future Technology Devices Int

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FT120 Datasheet Datasheet Version 1.4 Document No.: FT_000646 Clearance No.: FTDI# 291 Future Technology Devices International Ltd. FT120 (USB Devi

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Ultrafast Recovery Modules UFT120, 121 & 122 A N 4 Places Dim. Inches Millimeters C E 1 23 Common Cathode Min. A 1.995 Max. Min. 2.005 50.67

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Ordering number : ENA1169A SFT1202 Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA http://onsemi.com Applications • DC / DC convert

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GD150FFT120C6S_T4 STARPOWER SEMICONDUCTOR GD150FFT120C6S_T4 1200V/150A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra

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FT120 Datasheet Datasheet Version 1.4 Document No.: FT_000646 Clearance No.: FTDI# 291 Future Technology Devices International Ltd. FT120 (USB Devi

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.165V(Max)( IC= 1A; IB= 0.1A) ·Fast -Switching s

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Ordering number : ENA1168 SFT1201 www.DataSheet4U.com SANYO Semiconductors DATA SHEET SFT1201 Applications • NPN Epitaxial Planar Silicon Transis

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Ordering number : ENA1169 SFT1202 www.DataSheet4U.com SANYO Semiconductors DATA SHEET SFT1202 Applications • NPN Epitaxial Planar Silicon Transis

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Ultrafast Recovery Modules UFT120, 121 & 122 A N 4 Places Dim. Inches Millimeters C E 1 23 Common Cathode Min. A 1.995 Max. Min. 2.005 50.67

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Ultrafast Recovery Modules UFT120, 121 & 122 A N 4 Places Dim. Inches Millimeters C E 1 23 Common Cathode Min. A 1.995 Max. Min. 2.005 50.67

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Ultrafast Recovery Modules UFT120, 121 & 122 A N 4 Places Dim. Inches Millimeters C E 1 23 Common Cathode Min. A 1.995 Max. Min. 2.005 50.67

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GD50HFT120C1S_T4 STARPOWER SEMICONDUCTOR GD50HFT120C1S_T4 1200V/50A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra lo

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Ultrafast Recovery Modules UFT120, 121 & 122 A N 4 Places Dim. Inches Millimeters C E 1 23 Common Cathode Min. A 1.995 Max. Min. 2.005 50.67

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Ultrafast Recovery Modules UFT120, 121 & 122 A N 4 Places Dim. Inches Millimeters C E 1 23 Common Cathode Min. A 1.995 Max. Min. 2.005 50.67

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