GaA Datasheet | Specifications & PDF Download

Laser diodes AlGaAs laser diodes RLD-78MA The RLD-78MA is world’s first mass-produced laser diodes that is manufactured by molecular beam epitaxy. Th

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Matched GaAs SPDT Switch DC - 2 GHz Features q q q SW-331, SW-333 V 2.00 SW-331 (CR-2) Miniature Ceramic Package Fast Switching Speed, 7 ns Typical

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RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND I N/C N/C GND Q N/C 32 N/C GND LOIN G

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Features • Low Insertion Loss: 0.4 dB @ 1.0 GHz • High Isolation: 26 dB @ 2.0 GHz • Single low control voltage: 1.3 to 3.3 V • No external DC blocking

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Матрицы для ноутбуков со склада в Москве http://www.notebook-lcd.ru Москва, Варшавское шоссе, д.75, кор.2 Тел.: +79015534828 Матрицы для ноутбуков со

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www.DataSheet4U.com RoHS Compliant MASWSS0167 V2 Functional Schematic 2.5 V GaAs SPDT Switch 0.5 - 3.0 GHz Features • • • • • • • • Low Voltage Oper

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Product Specification S8740240P GaAs Push Pull, 40 – 870MHz, 23.5dB min. Gain @ 870MHz, 255mA max. @ 24VDC FEATURES • • • • • • Excellent linearity

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Features • Low Insertion Loss: 0.6 dB @ 2.5 GHz • Isolation: 20 dB @ 2.5 GHz • Low DC Power Consumption • Miniature UQFN6L (1.0x1.0x0.4 mm) Using Lead

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LS-0810 Series FEATURES  810nm Peak Wavelength  Long Life  RoHS Compliant  High Reliability DESCRIPTION The LS-0810 Series are AlGaAs LEDs with

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Laser diodes AlGaAs laser diodes RLD-78NP10-B The RLD-78NP10-B is one of the world’s first mass-produced laser diodes that is manufactured by molecul

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Proposed 0 Typical Applications RF3805 GaAs HBT PRE-DRIVER AMPLIFIER • GaAs HBT Pre-Driver for Basestation Amplifiers • Class AB Operation for GSM/E

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5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1000-BD Features On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @

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Global LCD Panel Exchange Center www.panelook.com Hitachi Displays, Ltd. Date; Sep. 08, 2008 For IDK Corporation TECHNICAL DATA TX39D30VC1GAA CONTE

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MASW-009359 GaAs Broadband High Power SP3T Switch DC - 4.0 GHz Features  CDMA Handset Switching Applications  Balanced (symmetrical) RF Ports  Low

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Red GaAsP LED Lamps Optoelectronic Products 2-4 FLV100 FLV101 FLV102 General Description The FLV100, FLV101 and FLV102 are red lightemitting diodes

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® TM Packaged and Bondable Chips GaAs Schottky Diodes MS8001 – MS8004 Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enha

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Features • Low Insertion Loss: 0.6 dB @ 2.5 GHz • High Isolation: 28 dB @ 5.8 GHz • Low control voltage: 1.3 to 3.3 V • No external DC blocking capaci

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DATA SHEET O K I G a A s P R O D U C T S KGL4208/KGL4209/KGL4210 10-Gbps GaAs Frequency Divider ICs February 2000 s s ––––––––––––––––––––––––––––––

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