GaN-Tr Datasheet | Specifications & PDF Download

TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

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Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

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Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

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Features: • 1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operati

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GS61008T Top-side cooled 100 V E-mode GaN transistor Datasheet Features • 100 V enhancement mode power transistor • Top-side cooled configuration • R

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www.DataSheet4U.com NINGBO TIANBO GANGLIAN ELECTRONICS OC., LTD HJR4102 SPECIFICATION FILE NUMBER：T810S-T002A DATE：2004/06/25 ■ CONTACT DATA Contac

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RX65T300HS2A 650V GaN Power Transistor (FET) Features • Easy to use, compatible with standard gate drivers • Excellent QG x RDS(on) figure of merit

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TIANBO GANGLIAN ELECTRONICS HJR-78F HJR-78F(TRKM) SPECIFICATION FILE NUMBER: P-08KE201A DATE: 2001/11/02 ■ Features 20A switching capability Small

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TPH3006PD PRODUCT SUMMARY (TYPICAL) VDS (V) 600 RDS(on) () 0.15 Qrr (nC) 54 Features  Low Qrr  Free-wheeling diode not required  High-side

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Features • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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polyfet rf devices GX3442 General Description Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for b

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TIANBO GANGLIAN ELECTRONICS HJQ-15F-2 HJQ-15F-2 SPECIFICATION FILE NUMBER: P-08KD501A DATE: 2001/11/02 ■ Features QC & PC terminals High dielectric

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NPT2019 Preliminary Gallium Nitride 48V, 25W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features 

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ISL70023SEH, ISL73023SEH 100V, 60A Enhancement Mode GaN Power Transistor Datasheet The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mo

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GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications 

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