GaN-Tr Datasheet | Specifications & PDF Download

TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predriver Features ⚫ AEC-Q100 Grade-1 Qualified (TPM2025Q Only) ⚫ Dual Independent Cha

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TPM2015Q Automotive Single-Channel Ultra-Highspeed GaN Predriver Features Description • AEC-Q100 Grade-1 Qualified (TPM2015Q Only) • 5-V Single Sup

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TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predriver Features ⚫ AEC-Q100 Grade-1 Qualified (TPM2025Q Only) ⚫ Dual Independent Cha

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TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

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Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

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Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

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JW1568K 650V Half-Bridge GaN with Gate Driver Preliminary Specifications Subject to Change without Notice DESCRIPTION FEATURES The JW1568K is an a

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Prerelease product(s) SGT080R70ILB Datasheet 700 V, 60 mΩ typ., 29 A, e-mode PowerGaN transistor 8 1 Features 5 4 Order code VDS RDS(on) max.

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Prerelease product(s) SGT105R70ILB Datasheet 700 V, 80 mΩ typ., 21.7 A, e-mode PowerGaN transistor 8 1 5 4 TAB 1 8 4 5 PowerFLAT 8x8 HV for P

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Production U2G4460-50F2 50W，4.4~6GHz， U2G4460-50F2 50W 4.4~6GHz 。 、。， 28V 。 5.8GHz Demo board 1： Ø : 60W Ø : 61.7% 1: 5.7～5.9GHz， VDD=28V, IDQ

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JW1515HA Offline QR GaN Flyback Controller Preliminary Specifications Subject to Change without Notice DESCRIPTION FEATURES The JW1515HA is a con

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INN650DA260A 650V GaN Enhancement-mode Power Transistor INN650DA260A 1. General description 650V GaN-on-silicon Enhancement-mode Power Transistor in

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QPD0030 ® 45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor Product Overview The QPD0030 is a 45 W (P3dB) unmatched discrete GaN on SiC HEMT which o

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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WLCSP12 GANB012-040CBA 40 V, 12 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.2 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) 12 March

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ISL81807 80V Dual Synchronous Boost Controller Optimized to Drive E-mode GaN FET Datasheet The ISL81807 is a dual synchronous boost controller that

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WLCSP16 GANB8R0-040CBA 40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) 31 Janu

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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