.
TRinno
TGAN20N135FD - Field Stop Trench IGBT
Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
TRinno
TGAN40N60F2DS - Field Stop Trench IGBT
Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel.
GaN Systems
GS-065-011-6-LR - 700V E-mode GaN transistor
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 125 mΩ •.
GaN Systems
GS-065-011-2-L - 650V E-mode GaN transistor
Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled 8x8 mm PDFN package • RDS(on) = 150 mΩ • .
TRinno
TGAN40N60FD - Field Stop Trench IGBT
Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation.
TIANBO GANGLIAN ELECTRONICS
HJR-3FF-S-Z - Relay
TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr.
TriQuint Semiconductor
TGA2623 - GaN Power Amplifier
Applications X-band radar TGA2623 10 – 11GHz 35W GaN Power Amplifier Product Features Frequency Range: 10 – 11GHz PSAT: 45.5dBm @ PIN = 18dBm .
TriQuint Semiconductor
TGA2590 - 30W GaN Power Amplifier
Applications Electronic Warfare Commercial and Military Radar TGA2590 6-12 GHz 30W GaN Power Amplifier Product Features Frequency Range: 6 - 1.
Wolfspeed
GTRA262802FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on Si.
GaN Systems
GS-065-004-1-L - 650V E-mode GaN transistor
Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is.
GaN Systems
GS-065-014-6-L - 700V E-mode GaN transistor
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 95.
ETC
U2G4460-50F2 - GaN high electron mobility transistor
Production U2G4460-50F2 50W，4.4~6GHz， U2G4460-50F2 50W 4.4~6GHz 。 、。， 28V 。 5.8GHz Demo board 1： Ø : 60W Ø : 61.7% 1: 5.7～5.9GHz， VDD=28V, IDQ.
TRinno
TGAN60N60FD - Field Stop Trench IGBT
Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
TRinno
TGAN30N120FD - Field Stop Trench IGBT
Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati.
TriQuint
QPA1013D - 10W GaN Power Amplifier
Applications Test Instrumentation Electronic Warfare (EW) Radar Communications QPA1013D 6 – 18GHz 10W GaN Power Amplifier Product Features .
Renesas
R5F100BGANA - 16-Bit Single-Chip Microcontrollers
Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an.
TriQuint Semiconductor
TGA2583-SM - 10W GaN Power Amplifier
Applications • Commercial and Military Radar TGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier QFN 5x5 mm 32L Product Features • Frequency Range: 2.
TriQuint Semiconductor
TGA2573 - 2-18 GHz 10 Watt GaN Amplifier
TGA2573 2-18 GHz 10 Watt GaN Amplifier Applications • Military Radar • Communications • Electronic warfare • Electronic counter measures • Test Equipm.
