H11 Datasheet | Specifications & PDF Download

NOT RECOMMENDED FOR NEW DESIGN USE AZ1117C or AZ1117I Pb Lead-Free AZ1117 1A LOW DROPOUT LINEAR REGULATOR Description The AZ1117 is a series of lo

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4H11G(NPN) 5H11G(PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and swi

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Technical specification Li-ion cell LG MH1 3.7V 3200 mAh General Specification High capacity 3200mAh Cylindrical rechargeable lithium ion battery LG

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1 A Low Dropout Positive Voltage Regulator LD1117A12/ADJ-LD1117A50/ADJ 1A Low Dropout Positive Voltage Regulator General Description • LD1117A is a t

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CH1115 128 X 64 Dot Matrix OLED/PLED Segment/Common Driver with Controller Features  Support maximum 128 X 64 dot matrix panel  Embedded 128 X 64

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4H11G(NPN) 5H11G(PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and swi

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1.8 Size 86mm High Torque Hybrid Stepping Motor General Specification for High Torque Hybrid Stepping Motor Item Step Angle Step Angle Accuracy Resi

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Complementary Power Transistors DPAK for Surface Mount Applications MJD44H11 (NPN), MJD45H11 (PNP) Designed for general purpose power and switching s

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www.DataSheet4U.com MJD44H11T4-A MJD45H11T4-A Complementary power transistors Features ■ ■ ■ ■ . The devices are qualified for automotive applicat

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www.DataSheet.co.kr EH11 Series • RoHS Compliant (Pb-free) • HCMOS/TTL output • 5.0V supply voltage • 14 pin DIP package • Stability to 20ppm • Custo

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NT3H1101/NT3H1201 NTAG I2C - Energy harvesting NFC Forum Type 2 Tag with field detection pin and I2C interface Rev. 3.3 — 15 July 2015 265433 Produ

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B CA D G H H E F

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DATA SHEET www.onsemi.com Zener Protection Diode NZ8DH Series The NZ8DH devices are designed for applications requiring transient overvoltage ESD pro

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Complementary Power Transistors DPAK for Surface Mount Applications MJD44H11 (NPN), MJD45H11 (PNP) Designed for general purpose power and switching s

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MwT-PH11F/MwT-PH11FV 12 GHz High Power AlGaAs/InGaAs pHEMT Features: • 33 dBm of Power at 12 GHz • 12 dB Small Signal Gain at 12 GHz • 45% PAE at 12

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80 IXFH/IXFM 11 N80 IXFH/IXFM 13 N

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MTCH112 Dual-Channel Proximity/Touch Controller Features: • Capacitive Proximity Detection System: - High Signal to Noise Ratio (SNR) - Adjustable se

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isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Comple

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