HETERO Datasheet | Specifications & PDF Download

DESCRIPTION The PT4317 is a low power single chip OOK/ASK superheterodyne receiver for the 315MHz and 434MHz frequency bands that offers a high level

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RFM83C/83CL V3.0 RFM83C/83CL Series ASK/OOK Super-heterodyne receiver module 1. General Information RFM83C/83CL series module are low cost super-

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Excelics DATA SHEET EPA018BV High Efficiency Heterojunction Power FET • • • • • • • • VERY HIGH fmax: 120GHz +20.0dBm TYPICAL OUTPUT POWER 13.0dB TY

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19-3704; Rev 1; 3/07 www.DataSheet4U.com 308MHz/315MHz/418MHz/433.92MHz Low-Power, FSK Superheterodyne Receiver General Description The MAX7042 full

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Excelics • • • • • EPB018A5/A7/A9-70 DATA SHEET Super Low Noise High Gain Heterojunction FET NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE TYPICAL 0.

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Excelics DATA SHEET • • • • • • +31.0dBm TYPICAL OUTPUT POWER 5.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSI

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Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3012NT1 is a

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Drop-InDISReplacement:CONTICE3512K2NUED DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL

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BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm) The BeRex BCP120C is a GaAs Power pHEMT with a nominal 0.25-micron by 1200-micr

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Excelics DATA SHEET • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSI

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BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm) The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm) The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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19-3273; Rev 1; 7/04 315MHz/433MHz ASK Superheterodyne Receiver with AGC Lock www.datasheet4u.com General Description Features ♦ Optimized for 315M

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Excelics • • • • • • • EPA160A/EPA160AV www.DataSheet4U.com DATA SHEET High Efficiency Heterojunction Power FET +31.0dBm TYPICAL OUTPUT POWER 8.5dB

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LIFETIME BUY LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband

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