HETERO Datasheet | Specifications & PDF Download

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high

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19-3273; Rev 1; 7/04 315MHz/433MHz ASK Superheterodyne Receiver with AGC Lock www.datasheet4u.com General Description Features ♦ Optimized for 315M

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www.DataSheet4U.com PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-

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HLMP-D101/D105, HLMP-K101/K105 T-1¾ (5 mm), T-1 (3 mm), High Intensity, Double Heterojunction AlGaAs Red LED Lamps Data Sheet Description These soli

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BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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19-2135; Rev 1; 8/02 315MHz Low-Power, +3V Superheterodyne Receiver General Description The MAX1470 is a fully integrated low-power CMOS superheterod

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Drop-InDISReplacement:CONTICE3512K2NUED DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL

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Excelics DATA SHEET Features • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +26dBm TYPICAL OUTPUT POWER • 9.0dB TYPICAL POWER GAIN AT 12 GHZ • 0.4 dB

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www.DataSheet4U.com HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low

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Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 1, 2/2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Effic

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BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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DOUBLE HETEROJUNCTION AlGaAs RED LOW CURRENT DISPLAYS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO

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DOUBLE HETEROJUNCTION AlGaAs RED SUNLIGHT VIEWABLE DISPLAYS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOT

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