HI-8120 Datasheet | Specifications & PDF Download

ISL9R8120P2 / ISL9R8120S3S May 2002 ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth™ Diode General Description The ISL9R8120P2 and ISL9R8120S3S are Ste

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RHRP8120 Data Sheet January 2002 8A, 1200V Hyperfast Diode The RHRP8120 is a hyperfast diodes with soft recovery characteristics (trr < 55ns). It has

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ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S May 2002 ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth™ Diode General Description The I

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SM8120A White LED Driver IC OVERVIEW The SM8120A is a high efficiency step-up DC/DC converter. Due to high voltage CMOS process realizing 24V output s

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MOSFETs Silicon P-Channel MOS (U-MOS) TPCA8120 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small fo

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PE58120P N-Channel Enhancement Mode Power MOSFET Description The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charg

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RY8120 18V 2A 500KHz Synchronous Step-Down Regulator Features • Wide 4.5V to 18V Operating Input Range • 2A Continuous Output Current • 500KHz Swit

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ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S May 2002 ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth™ Diode General Description The I

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R

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TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8120 Lithium Ion Battery Applications Power Management Switch Applica

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PE58120G N-Channel Enhancement Mode Power MOSFET Description The PE58120G uses deep trench technology to provide excellent RDS(ON) and low gate charg

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ETA8120 18V, 2A, High Efficiency Synchronous Step-Down Converter in SOT23-6 DESCRIPTION ETA8120 is a wide input range, high-efficiency and high freq

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HI-8020/HI-8120 September 2006 CMOS HIGH VOLTAGE DISPLAY DRIVER PIN CONFIGURATION (Top View) S26 S25 S24 S23 S22 S21 S20 DOUT 32 BP S19 S18 6 5 4 3 2

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ISL9K18120G3 May 2002 ISL9K18120G3 18A, 1200V Stealth™ Dual Diode General Description The ISL9K18120G3 is a Stealth™ dual diode optimized for low lo

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ISL9K8120P3 May 2002 ISL9K8120P3 8A, 1200V Stealth™ Dual Diode General Description The ISL9K8120P3 is a Stealth™ dual diode optimized for low loss p

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ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S May 2002 ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth™ Diode General Description The I

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ISL9R8120P2 / ISL9R8120S3S May 2002 ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth™ Diode General Description The ISL9R8120P2 and ISL9R8120S3S are Ste

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1-1-3 DC/DC Converter ICs SI-8000JF Series Full-Mold, Separate Excitation Step-down Switching Mode ■Features • Compact full-mold package (equivalent

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ISL9R8120P2 / ISL9R8120S3S May 2002 ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth™ Diode General Description The ISL9R8120P2 and ISL9R8120S3S are S

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