HM44 Datasheet | Specifications & PDF Download

+0 P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology to provide excellent RDS(ON), This device

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MotionKing (China) Motor Industry Co., Ltd. HB Stepper Motor Catalog 2 Phase Hybrid Stepper Motor 16HM series-Size 39mm(0.9 degree) Wiring Diagram:

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MotionKing (China) Motor Industry Co., Ltd. HB Stepper Motor Catalog 2 Phase Hybrid Stepper Motor 16HM series-Size 39mm(0.9 degree) Wiring Diagram:

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HM4490 N-Channel Enhancement Mode Power MOSFET Description The HM4490 uses advanced trench technology and design to provide excellent RDS(ON) with lo

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P-Channel Enhancement Mode Power MOSFET Description The HM4421 uses advanced trench technology and design to provide excellent RDS(ON) with low gate c

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HM4443 P-Channel Enhancement Mode Power MOSFET Description The HM4443 uses advanced trench technology to provide excellent RDS(ON), This device is su

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HM4449 P-Channel Enhancement Mode Power MOSFET Description The HM4449 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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HM4430-VB HM4430-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.004 at VGS = 10 V 0.005 at V

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HM4453C P-Channel Enhancement Mode Power MOSFET Description The HM4453C uses advanced trench technology to provide excellent RDS(ON), low gate charge

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N-Channel Enhancement Mode Power MOSFET Description The HM4490B uses advanced trench technology and design to provide excellent RDS(ON) with low gate

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HM4409A P-Channel Enhancement Mode Power MOSFET Description The HM4409A uses advanced trench technology to provide excellent RDS(ON), This device is

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HM4402B N-Channel Enhancement Mode Power MOSFET Description The HM4402B uses advanced trench technology and design to provide excellent RDS(ON) with

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HM4402D N-Channel Enhancement Mode Power MOSFET Description The HM4402D uses advanced trench technology and design to provide excellent RDS(ON) with

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Description The +0 & uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety

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+0 N-Channel Enhancement Mode Power MOSFET Description The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) wit

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HM4452 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with lo

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HM4454 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with lo

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N-Channel Enhancement Mode Power MOSFET Description The HM4486A uses advanced trench technology and design to provide excellent RDS(ON) with low gate

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HM4486E 100VDS／±20VGS／3.5A(ID) N-Channel Enha ncement Mode MOSFET Features zzzzVERHRRSeDiglDDDSihSSSa=((bp

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HM4482 100VDS／±20VGS／2.5A(ID) N-Channel Enha ncement Mode MOSFET Features z VDSS=100V／VGSS=±20V／ID=2.5A RDS(ON)=105mΩ(Max.)@VGS=10V RDS(ON)=115mΩ(Max

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