HM4490 - N-Channel Enhancement Mode Power MOSFET
HM4490 Features
* VDS =200V,ID =3.9A RDS(ON) < 79mΩ @ VGS=10V （Typ：56mΩ）
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Low gate to drain charge to reduce switching losses Application
* Power switching application
* Hard switched and h
