HM4490

N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number:

HM4490

Manufacturer:

H&M Semiconductor

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506.41 KB

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Description:

N-channel enhancement mode power mosfet.
HM4490 N-Channel Enhancement Mode Power MOSFET Description The HM4490 uses advanced trench technolo.
The HM4490 uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha.

✔ HM4490 Features

VDS =200V,ID =3.9A RDS(ON) < 79mΩ @ VGS=10V （Typ：56mΩ）
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Low gate t

✔ HM4490 Application

General Features
VDS =200V,ID =3.9A RDS(ON) < 79mΩ @ VGS=10V （Typ：56mΩ）
High density cell design for

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HM4490 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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