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HM4488 - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM4488
Manufacturer	H&M Semiconductor
File Size	450.46 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM4488-HMSemiconductor.pdf

HM4488 Product details

Description

The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V （Typ：31mΩ） Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses +0.

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Published: Nov 27, 2018 |