HO-12 Datasheet | Specifications & PDF Download

HYG012N03LR1P/B N-Channel Enhancement Mode MOSFET Feature  30V/250A RDS(ON)= 1.2 mΩ (typ.) @VGS = 10V RDS(ON)= 1.4 mΩ (typ.) @VGS = 4.5V  100% Ava

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1.25 Gbps Single Mode Transceiver C-13-1250(C)-T(3)-SSC(2) Features • SC Duplex Single Mode Transceiver • Industry Standard 1x9 Footprint • Gigabit E

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U12C20C thru U12C60C ® U12C20C thru U12C60C Pb Pb Free Plating Product 12 Ampere Common Cathode Ultra Fast Recovery Rectifiers Feature Fast swit

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1N5712 SMALL SIGNAL SCHOTTKY DIODES Features Metal-to-silicon junction High breakdown voltage Low turn-on voltage Ultrafast switching speed M

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UTC7312 S w w aDUAL RECORDING/PLAYBACK D CIRCUIT WITH . PRE-AMPLIFIER w ALC DESCRIPTION The UTC7312 is a monolithic integrated circuit designed for

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by J112/D JFET Chopper Transistor N–Channel — Depletion 1 DRAIN 3 GATE J112 2 SOURCE M

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HRLO120N10H Jan 2016 HRLO120N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capabi

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1.25 Gbps Single Mode Transceiver C-13-1250(C)-T(3)-SSC(2) Features • SC Duplex Single Mode Transceiver • Industry Standard 1x9 Footprint • Gigabit E

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PC123/PC123F PC123/PC123F s Features 1. Conform to European Safety Standard 2. Internal isolation distance : 0.4mm or more 3. High collector-emitter

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HY5012W/A N-Channel Enhancement Mode MOSFET Features • 125V/300A RDS(ON)=2.9 m  (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Fr

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SPECIFICATION OF WCM SERIES FEATURES Lowprofile and very small size SMD Design, Wound Chip constructure with standard 0805 to 1812 size, with best EMI

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THD SERIES THD

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F12C20C thru F12C60C ® F12C20C thru F12C60C Pb Pb Free Plating Product 12.0 Ampere Common Cathode Fast Recovery Rectifier Diode Feature Fast swi

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DGL50N120CTL0D RoHS COMPLIANT IGBT Discrete \ VCE IC 1200 V 50 A VCE(SAT) IC=50A 1.80 V Circuit Maximum Ratings Parameter Collector-Emitte

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U12C20C thru U12C60C ® U12C20C thru U12C60C Pb Pb Free Plating Product 12 Ampere Common Cathode Ultra Fast Recovery Rectifiers Feature Fast swit

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U12C20C thru U12C60C ® U12C20C thru U12C60C Pb Pb Free Plating Product 12 Ampere Common Cathode Ultra Fast Recovery Rectifiers Feature Fast swit

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community TPA6120A2 SLOS431B – MARCH 2004 – REVISED FEBRUARY 2015 TPA6

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ShenZhen Hi-Semicon Electronics Co.,Ltd Datasheet SC3D20120D Silicon Carbide Schottky Barrier Diode Features Applications  1200-Vol t Schottky Re

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1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents Schottky Barrier Diode Available on commercial versions MELF Surface Mount

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