HY19 datasheet | Specifications & PDF Download

HOOYI

HY1906B - N-Channel Enhancement Mode MOSFET

HY1906P/B N-Channel Enhancement Mode MOSFET Features • 60V / 120 A , RDS(ON)= 6.0 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugge.

Rating: 3 ★★★ (105 votes)

HOOYI

HY1908PM - N-Channel Enhancement Mode MOSFET

HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.

Rating: 2 ★★ (70 votes)

HOOYI

HY1906P - N-Channel Enhancement Mode MOSFET

HY1906P N-Channel Enhancement Mode MOSFET Features • • • • 65V/130A RDS(ON) = 7.5 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested G Reli.

Rating: 1 ★ (45 votes)

HOOYI

HY19P03 - P-Channel MOSFET

HY19P03 D/U/V Feature P-Channel Enhancement Mode MOSFET Pin Description  -30V/-90A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 6.5mΩ(typ.)@VGS = 4.5V .

Rating: 1 ★ (37 votes)

HOOYI

HY1908P - N-Channel Enhancement Mode MOSFET

HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.

Rating: 1 ★ (17 votes)

HOOYI

HY1904V - N-Channel Enhancement Mode MOSFET

HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugge.

Rating: 1 ★ (14 votes)

HOOYI

HY1908D - N-Channel Enhancement Mode MOSFET

HY1908D/U/S N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)=7.8 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • .

Rating: 1 ★ (12 votes)

HUAYI

HY1906C2 - Single N-Channel Enhancement Mode MOSFET

HY1906C2 Single N-Channel Enhancement Mode MOSFET Feature  60V/70A RDS(ON)= 5.7 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  .

Rating: 1 ★ (12 votes)

HOOYI

HY1904C2 - Single N-Channel Enhancement Mode MOSFET

HY1904C2 Single N-Channel Enhancement Mode MOSFET Feature Description  40V/65A RDS(ON)= 5.1mΩ(typ.)@VGS = 10V RDS(ON)= 6.2mΩ(typ.)@VGS = 4.5V  100.

Rating: 1 ★ (10 votes)

HOOYI

HY1908B - N-Channel Enhancement Mode MOSFET

HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.

Rating: 1 ★ (9 votes)

HOOYI

HY19P03U - P-Channel MOSFET

HY19P03 D/U/V Feature P-Channel Enhancement Mode MOSFET Pin Description  -30V/-90A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 6.5mΩ(typ.)@VGS = 4.5V .

Rating: 1 ★ (9 votes)

HOOYI

HY19P03V - P-Channel MOSFET

HY19P03 D/U/V Feature P-Channel Enhancement Mode MOSFET Pin Description  -30V/-90A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 6.5mΩ(typ.)@VGS = 4.5V .

Rating: 1 ★ (9 votes)

HOOYI

HY1908M - N-Channel Enhancement Mode MOSFET

HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.

Rating: 1 ★ (8 votes)

HOOYI

HY19P03D - P-Channel MOSFET

HY19P03 D/U/V Feature P-Channel Enhancement Mode MOSFET Pin Description  -30V/-90A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 6.5mΩ(typ.)@VGS = 4.5V .

Rating: 1 ★ (8 votes)

HOOYI

HY1908U - N-Channel Enhancement Mode MOSFET

HY1908D/U/S N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)=7.8 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • .

Rating: 1 ★ (7 votes)

Alpha Industries

HY19-12 - 90 Degree Hybrid 1.85-1.99 GHz

90 Degree Hybrid 1.85–1.99 GHz HY19-12 Features s Low Cost s Low Profile s Small SOIC-8 Package s Tape & Reel Description The HY19-12 is a 90 degree .

Rating: 1 ★ (7 votes)

HOOYI

HY1904D - N-Channel Enhancement Mode MOSFET

HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugge.

Rating: 1 ★ (7 votes)

HOOYI

HY1908MF - N-Channel Enhancement Mode MOSFET

HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.

Rating: 1 ★ (6 votes)

HOOYI

HY1904U - N-Channel Enhancement Mode MOSFET

HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugge.

Rating: 1 ★ (6 votes)

HOOYI

HY1908S - N-Channel Enhancement Mode MOSFET

HY1908D/U/S N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)=7.8 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • .

Rating: 1 ★ (5 votes)

HY19 Datasheet | Specifications & PDF Download

HY19-12 90 Degree Hybrid 1.85-1.99 GHz