HY1908D N-Channel Enhancement Mode MOSFET

HOOYI

Description

HY1908D/U/S N-Channel Enhancement Mode MOSFET .
S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L Applications. Power Management for Inverter Systems.

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Datasheet Specifications

Part number: HY1908D
Manufacturer: HOOYI
File Size: 629.70 KB
Datasheet: HY1908D-HOOYI.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* 80V/90A, RDS(ON)=7.8 mΩ (typ. ) @ V =10V GS
* Avalanche Rated
* Reliable and Rugged

Applications

* Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S DUS HY1908 HY1908 HY1908 YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G Package Code D : TO-252-2L S : TO-251-3L Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HOOYI

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HY1908D N-Channel Enhancement Mode MOSFET HOOYI

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