HY19P03U Datasheet, Mosfet, HOOYI

PDF File Details

Part number:

HY19P03U

Manufacturer:

HOOYI

File Size:

690.03kb

Download:

📄 Datasheet

Description:

P-channel mosfet.

-30V/-90A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 6.5mΩ(typ.)@VGS = 4.5V

100% avalanche tested

Reliabl

HY19P03U Application

• Applications
• Power Management in DC/DC converter. P-Channel MOSFET Ordering and Marking Information D U HY19P03 HY19P03 YYXXXJWW G Y

TAGS

HY19P03U

HOOYI

📁 Related Datasheet

HY19P03 - P-Channel MOSFET (HOOYI)
HY19P03 D/U/V Feature P-Channel Enhancement Mode MOSFET Pin Description  -30V/-90A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 6.5mΩ(typ.)@VGS = 4.5V .

HY19P03D - P-Channel MOSFET (HOOYI)
HY19P03 D/U/V Feature P-Channel Enhancement Mode MOSFET Pin Description  -30V/-90A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 6.5mΩ(typ.)@VGS = 4.5V .

HY19P03V - P-Channel MOSFET (HOOYI)
HY19P03 D/U/V Feature P-Channel Enhancement Mode MOSFET Pin Description  -30V/-90A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 6.5mΩ(typ.)@VGS = 4.5V .

HY19-12 - 90 Degree Hybrid 1.85-1.99 GHz (Alpha Industries)
90 Degree Hybrid 1.85–1.99 GHz HY19-12 Features s Low Cost s Low Profile s Small SOIC-8 Package s Tape & Reel Description The HY19-12 is a 90 degree .

HY1904C2 - Single N-Channel Enhancement Mode MOSFET (HOOYI)
HY1904C2 Single N-Channel Enhancement Mode MOSFET Feature Description  40V/65A RDS(ON)= 5.1mΩ(typ.)@VGS = 10V RDS(ON)= 6.2mΩ(typ.)@VGS = 4.5V  100.

HY1904D - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugge.

HY1904U - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugge.

HY1904V - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugge.

HY1906B - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1906P/B N-Channel Enhancement Mode MOSFET Features • 60V / 120 A , RDS(ON)= 6.0 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugge.

HY1906C2 - Single N-Channel Enhancement Mode MOSFET (HUAYI)
HY1906C2 Single N-Channel Enhancement Mode MOSFET Feature  60V/70A RDS(ON)= 5.7 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  .