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HCA60R099F Dec 2021 HCA60R099F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HCA60R070F July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excell

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HCA60R040F Dec 2020 HCA60R040F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HCS80R850S Dec 2019 HCS80R850S 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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KSX13007A Series KSH13007A KSH13007AF NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 8A General Description • High voltage, high speed po

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HCT70R1K6 Super Junction MOSFET Jan 2018 HCT70R1K6 700V N-Channel Super Junction MOSFET Features  Very Low FOM (RDS(on) X Qg)  Extremely low swit

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BT136- 600 BT136-600 4 Quadrants Sensitive TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V  R.M.S On–State Current (IT(RMS) = 4A)  Sensit

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HTB1A60_HTB1A80 HTB1A60/HTB1A80 4 Quadrants Sensitive TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V/800V  R.M.S On–State Current (IT(RMS

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RELAY ype T Type JQX-30F HLS6-3100H Appearance Appearance Dimension Contact Form Contact Material Contact Ratings 38x35.5x48 1C Au+Ag 1A:120VAC/24V

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KSH13007 www.DataSheet4U.com KSH13007 ◎ SEMIHOW REV.A0,May 2003 KSH13007 www.DataSheet4U.com KSH13007 Switch Mode series NPN silicon Power Trans

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HRP105N15H Jan 2016 HRP105N15H 150V N-Channel Trench MOSFET Features ‰ High Speed Power Switching, Logic Level ‰ Enhanced Body diode dv/dt capabili

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HTS16A60H_HTS16A80H HTS16A60H/HTS16A80H 3 Quadrants Standard TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V/800V  R.M.S On–State Current

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KSX13009A Series KSH13009A KSH13009AF / KSH13009AL NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 12A General Description • High voltage,

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MCR100- 6 MCR100-6 Silicon Controlled Rectifier FEATURES  Repetitive Peak Off-State Voltage: 400V  R.M.S On–State Current (IT(RMS) = 0.8A)  Low Ga

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HFS5N60S Aug 2007 HFS5N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 2.0 ȍ ID = 4.5 A FEATURES ‰ Originative New Design ‰ Superior Avalanc

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TIP125/126/127 TIP125/126/127 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -

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HCS65R380S-FM_Green Feb. 2021 HCS65R380S-FM_Green 650V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switc

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KSX13003A Series KSB13003A / KSG13003A KSC13003A / KSH13003A NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A General Description • Hi

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